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PMF280UN,115

Part No PMF280UN,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 1.02A SOT323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.02A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 0.89nC @ 4.5V
Max Input Capacitance 45pF @ 20V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 560mW (Tc)
Maximum Rds On at Id,Vgs 340 mOhm @ 200mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323-3
Dimension SC-70, SOT-323
Win Source Part Number 107739-PMF280UN,115
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Computers & Computer Peripherals, Communications & Networking, Consumer Electronics, Industrial
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian PMF280UN,115 CAD Model

Description

Introducing the PMF280UN,115 MOSFET from NXP Semiconductors

Discover the power and efficiency of NXP's PMF280UN,115, a cutting-edge MOSFET that offers a perfect blend of performance and reliability for a wide range of applications. This compact and robust semiconductor device is designed to meet the increasing demands of modern electronic circuits, providing designers with a versatile solution for their power management needs.

Key Features

  • Low On-Resistance: The PMF280UN,115 boasts an exceptionally low on-resistance, which translates to reduced power losses and improved efficiency in electronic circuits.
  • High-Speed Switching: Engineered for high-speed switching applications, this MOSFET provides rapid transitions that enhance performance in power conversion systems.
  • Logic Level Gate Drive: The device can be driven by logic level voltages, making it compatible with modern microcontrollers and simplifying the design of control circuits.
  • Surface-Mount Package: Housed in a compact SOT-23 package, the PMF280UN,115 is ideal for space-constrained applications, while also offering excellent thermal performance.
  • Energy Efficiency: With its low power consumption and minimal heat generation, this MOSFET is an energy-efficient choice for battery-powered devices and energy-sensitive systems.

Applications

The versatility of the PMF280UN,115 MOSFET makes it suitable for a broad range of applications, including:

  • Power supply circuits
  • DC/DC converters
  • Motor control systems
  • Load switching
  • Power management in portable devices

Product Specifications

The PMF280UN,115 is characterized by its impressive technical specifications:

  • Drain-source voltage (V<sub>DS): 30V
  • Continuous drain current (I<sub>D): 3.1A
  • Power dissipation (P<sub>D): 1.25W
  • Operating temperature range: -55°C to 150°C

Designed for durability and performance, the PMF280UN,115 from NXP is a testament to the company's commitment to providing high-quality, reliable components for the electronics industry. Whether you're designing power systems for consumer electronics, automotive, or industrial applications, the PMF280UN,115 is a choice you can trust to deliver top-notch performance and efficiency.

Enhance your designs with the PMF280UN,115 MOSFET and experience the difference in power management that NXP Semiconductors can offer.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0316 $60.9480
70+ $1.6678 $116.7460
110+ $1.6158 $177.7380
150+ $1.5639 $234.5850
195+ $1.5107 $294.5865
260+ $1.3548 $352.2480
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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