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PMN25EN,115

Part No PMN25EN,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6.2A 6TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 492pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 540mW (Ta), 6.25W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 6.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SC-74, SOT-457
Win Source Part Number 1089696-PMN25EN,115
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian PMN25EN,115 CAD Model

Description

Product Overview: PMN25EN,115

The PMN25EN,115 is a high-performance, low-power MOSFET transistor produced by NXP Semiconductors, a leader in the electronic components industry. This product is designed to meet the demanding requirements of modern electronic circuits, providing efficient power management and signal processing capabilities.

Key Features

  • Low On-Resistance: The PMN25EN,115 offers a very low on-resistance, which results in minimal power loss during operation and enhances overall efficiency.
  • High-Speed Switching: With its fast switching characteristics, this MOSFET is suitable for high-frequency applications, contributing to better performance in power conversion and regulation circuits.
  • Low Threshold Voltage: The device operates at a low threshold voltage, making it ideal for low-voltage applications and compatible with modern microcontroller logic levels.
  • Small Footprint: Housed in a compact package, the PMN25EN,115 is optimized for space-constrained applications without compromising on power and performance.

Applications

The versatility of the PMN25EN,115 allows it to be used in a variety of applications, including:

  • Power management modules
  • DC-DC converters
  • Battery-powered devices
  • Motor control circuits
  • Switching regulators
  • Load switches

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 20V Continuous Drain Current (I<sub>D) 3.1A Power Dissipation (P<sub>D) 0.85W Operating Temperature -55°C to +150°C

With its robust design and reliable performance, the PMN25EN,115 from NXP Semiconductors is an excellent choice for designers looking to improve the efficiency and longevity of their electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1146 $61.3030
130+ $0.9148 $118.9240
200+ $0.8859 $177.1800
270+ $0.8582 $231.7140
350+ $0.8293 $290.2550
470+ $0.7438 $349.5860
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,500 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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