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PMR780SN

Part No PMR780SN
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 0.55A SOT416
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 1.05nC @ 10V
Max Input Capacitance 23pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 530mW (Tc)
Maximum Rds On at Id,Vgs 920 mOhm @ 300mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-75
Dimension SC-75, SOT-416
Win Source Part Number 061974-PMR780SN
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PMR780SN CAD Model

Description

The NXP PMR780SN is a cutting-edge, high-performance RF transistor that is designed to meet the rigorous demands of modern communication systems. This product is part of NXP's extensive portfolio of RF solutions and is specifically engineered to deliver superior efficiency and reliability in a wide range of applications.

Key Features

  • Frequency Range: The PMR780SN operates at a frequency range suitable for various RF applications, ensuring versatility across different communication standards.
  • High Power: This transistor is capable of handling high power levels, making it ideal for applications where signal strength is paramount.
  • Efficiency: With its advanced design, the PMR780SN offers exceptional energy efficiency, which can lead to reduced operational costs and a lower carbon footprint.
  • Durability: Manufactured with robust materials, the PMR780SN is built to withstand harsh conditions and provide consistent performance over time.
  • Compact Size: The transistor's compact footprint allows for integration into space-constrained designs without compromising on power or efficiency.

Applications

The PMR780SN is well-suited for a variety of applications, including but not limited to:

  • Base station transceivers for cellular networks
  • RF power amplifiers for wireless communication
  • Public safety communications systems
  • Industrial, scientific, and medical (ISM) applications

Product Specifications

The PMR780SN is designed with the following specifications:

  • Advanced LDMOS technology
  • High gain and wideband performance
  • Excellent thermal stability
  • Integrated ESD protection

Quality and Support

NXP is committed to delivering high-quality products, and the PMR780SN is no exception. Customers can expect comprehensive technical support and resources to ensure seamless integration and optimal performance in their systems. With NXP's reputation for reliability, the PMR780SN stands as a testament to the company's dedication to advancing RF technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.7907 $60.6512
38+ $3.1104 $118.1952
58+ $3.0134 $174.7772
80+ $2.9164 $233.3120
103+ $2.8194 $290.3982
138+ $2.5271 $348.7398
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 12,000 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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