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PMV56XN,215

Part No PMV56XN,215
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 3.76A SOT23
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 650mV @ 1mA
Max Gate Charge 5.4nC @ 4.5V
Max Input Capacitance 230pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.92W (Tc)
Maximum Rds On at Id,Vgs 85 mOhm @ 3.6A, 4.5V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 004425-PMV56XN,215
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PMV56XN,215 CAD Model

Description

Introducing the PMV56XN,215 MOSFET by NXP Semiconductors

The PMV56XN,215 is a high-performance, N-channel Trench MOSFET produced by the renowned NXP Semiconductors, a leader in the field of advanced semiconductor solutions. This particular MOSFET is designed to deliver efficiency and reliability for a wide range of applications, making it a versatile component for designers and engineers alike.

Key Features

  • Low On-Resistance: The PMV56XN,215 boasts an extremely low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, ensuring minimal power loss and heat generation during operation.
  • Enhanced Power Density: Thanks to its compact SOT-23 package, the PMV56XN,215 offers excellent power density, making it suitable for space-constrained applications without sacrificing performance.
  • Low Threshold Voltage: The device features a low threshold voltage, which allows for better control of the MOSFET in low voltage applications.

Applications

The PMV56XN,215 is engineered to meet the demands of a variety of applications. It is particularly well-suited for:

  • Power management circuits
  • DC-DC converters
  • Load switches
  • Battery management systems
  • Motor control units

Product Specifications

The PMV56XN,215 operates with a continuous drain current (I<sub>D) of up to 3.1 A, making it capable of handling moderate power levels. The device can support drain-source voltages (V<sub>DS) up to 30 V, which is adequate for various low- to medium-voltage applications. The MOSFET's maximum power dissipation (P<sub>D) stands at 1.25 W, ensuring it can sustain its performance without overheating.

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The PMV56XN,215 is no exception, as it is manufactured with state-of-the-art technology and subjected to rigorous testing to ensure it meets the needs of the most demanding electronic systems.

Whether you are designing power supplies, portable devices, or industrial control systems, the PMV56XN,215 from NXP Semiconductors is an excellent choice for enhancing efficiency and performance in your electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $29.0864 $58.1728
5+ $23.8658 $119.3290
8+ $23.1196 $184.9568
11+ $22.3735 $246.1085
14+ $21.6285 $302.7990
18+ $19.3913 $349.0434
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Availability: 3,000 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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