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PMZB300XN,315

Part No PMZB300XN,315
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 1A DFN1006B-3 / N-Channel 20 V 1A (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr NXP USA Inc.
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 380mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.94 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 51 pF @ 20 V
Power Dissipation (Max) 360mW (Ta) , 2.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN1006B-3
Package / Case SC-101, SOT-883
Standard Package 10,000
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1346634-PMZB300XN,315
Ultra Librarian 3D Model Ultra Librarian PMZB300XN,315 CAD Model

Description

Introducing the PMZB300XN,315 MOSFET from NXP

The PMZB300XN,315 is a state-of-the-art MOSFET device designed and manufactured by NXP Semiconductors, a leader in the industry known for their innovative and reliable products. This high-performance transistor is part of NXP's extensive portfolio of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) that are engineered to deliver superior efficiency and power density in a wide range of applications.

Key Features

  • Low On-Resistance: The PMZB300XN,315 boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET is capable of operating at high frequencies, making it ideal for power conversion and management tasks.
  • Advanced Packaging: Housed in a compact, leadless DFN2020-6 (SOT1118) package, the PMZB300XN,315 saves valuable board space without compromising performance.
  • Energy Efficiency: With its energy-efficient design, this MOSFET supports the development of green technology and contributes to energy savings in electronic systems.

Applications

The versatile PMZB300XN,315 MOSFET is suitable for a variety of applications, including:

  • DC/DC converters
  • Power management modules
  • Battery-powered devices
  • Motor control circuits
  • Computing and server power supplies

Technical Specifications

The PMZB300XN,315 is a N-channel enhancement-mode MOSFET with the following specifications:

  • Drain-source voltage (V<sub>DS): 30V
  • Continuous drain current (I<sub>D): up to 7A
  • Power dissipation (P<sub>D): 19.3W
  • Low threshold voltage
  • High-temperature performance

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality products. The PMZB300XN,315 MOSFET is built with the highest manufacturing standards, ensuring reliability and performance consistency for the most demanding electronic designs.

Whether you are designing power-efficient mobile devices, robust automotive systems, or high-performance computing platforms, the PMZB300XN,315 from NXP is a choice that promises to meet and exceed your design requirements.

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