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PSMN005-75B,118

Part No PSMN005-75B,118
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 75A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 165nC @ 10V
Max Input Capacitance 8250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 118576-PSMN005-75B,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN005-75B,118 CAD Model

Description

Product Overview: PSMN005-75B,118 by NXP Semiconductors

The PSMN005-75B,118 is a high-performance N-channel MOSFET designed and manufactured by NXP Semiconductors, a leader in the field of high-quality electronic components. This MOSFET is a part of the NextPowerS3 portfolio, which is renowned for its efficiency and reliability. The product is specifically engineered to meet the demands of modern electronic circuits, providing a combination of low on-state resistance and high switching performance.

Key Features

  • Low On-Resistance: The PSMN005-75B,118 boasts an extremely low on-resistance (R<sub>DS(on)) of just 4.4 mΩ at V<sub>GS = 10 V, which significantly reduces conduction losses and improves overall efficiency.
  • High Current Capability: With a continuous drain current (I<sub>D) of 100 A, this MOSFET can handle high current applications with ease, making it suitable for power-intensive tasks.
  • Enhanced Power Density: The device's compact size combined with its high current rating allows for increased power density in applications, providing a performance advantage in space-constrained designs.
  • High Switching Performance: Fast switching speeds minimize energy loss during the transition periods, contributing to the efficiency of the overall system.
  • Ruggedness: The MOSFET is designed to withstand harsh conditions, ensuring reliability and a long operational lifespan.

Applications

The PSMN005-75B,118 is versatile and can be used in a wide range of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Automotive applications
  • Switching circuits

Package and Quality Assurance

The PSMN005-75B,118 comes in a TO-220 package, which is widely used in the industry and known for its robustness. The package is designed to offer excellent thermal performance, ensuring the device operates within its specified temperature range even under high power conditions. NXP Semiconductors adheres to strict quality control measures, ensuring that each PSMN005-75B,118 MOSFET meets the highest standards of performance and reliability. Customers can trust in the durability and performance of this high-quality electronic component for their critical applications.

For engineers and designers looking for a MOSFET that delivers both power and efficiency, the PSMN005-75B,118 from NXP Semiconductors is an excellent choice that balances performance with reliability.

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