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PSMN011-80YS

Part No PSMN011-80YS
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2800pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 117W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 092275-PSMN011-80YS
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN011-80YS CAD Model

Description

The PSMN011-80YS is a high-performance, N-channel MOSFET produced by NXP Semiconductors, a leader in the electronics industry. This MOSFET is part of NXP's NextPowerS3 portfolio, which is renowned for its efficiency and reliability in power management applications. Designed to optimize power density and efficiency, the PSMN011-80YS is an excellent choice for a wide range of applications, including DC-DC converters, motor drives, and power supply units.

This state-of-the-art MOSFET features an extremely low on-state resistance (R<sub>DS(on)) of just 11 mΩ at a gate-source voltage of 10V, which significantly reduces conduction losses and enhances overall system efficiency. The device is also characterized by a maximum continuous drain current (I<sub>D) of 120A, allowing for high current handling capabilities. This makes the PSMN011-80YS suitable for high-power applications that require robust current throughput.

With a drain-source voltage (V<sub>DS) of 80V, the PSMN011-80YS provides a good balance between high voltage handling and low on-state resistance, which is critical for applications that demand both high efficiency and reliability. The MOSFET's robustness is further enhanced by its ability to withstand high pulse currents and its excellent avalanche performance, ensuring safe operation under extreme conditions.

The PSMN011-80YS is housed in an LFPAK56 (Power-SO8) package, which not only offers a compact footprint but also ensures superior thermal performance. The package is designed for surface-mount technology (SMT), making it easy to integrate into various PCB designs. Additionally, the LFPAK56 package is known for its high reliability due to its copper clip and solder die attach, providing excellent thermal and electrical conductivity.

Engineers seeking a robust and efficient power switch for their next project will find the PSMN011-80YS to be an ideal solution. Its combination of low R<sub>DS(on), high I<sub>D, and excellent thermal characteristics make it a standout component in NXP's power MOSFET lineup. For detailed specifications, application notes, and support documentation, customers are encouraged to visit NXP Semiconductors' official website or contact their local sales representative.

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Quantity Unit Price Ext. Price
18+ $3.2640 $58.7520
44+ $2.6784 $117.8496
67+ $2.5953 $173.8851
92+ $2.5110 $231.0120
119+ $2.4278 $288.9082
160+ $2.1760 $348.1600
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Availability: 35,000 pieces
MOQ: 18 pcs
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