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PSMN015-100P

Part No PSMN015-100P
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 75A TO220AB
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 4900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 210278-PSMN015-100P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN015-100P CAD Model

Description

The PSMN015-100P is a high-performance N-channel enhancement-mode Field-Effect Transistor (FET) produced by NXP Semiconductors. This MOSFET is designed to deliver efficient power management and conversion in a wide array of applications. Its robustness and reliability make it an ideal choice for demanding environments.

Key Features

  • Low On-Resistance: The PSMN015-100P offers a very low on-state resistance (R<sub>DS(on)) of 15 mΩ at 10 V, minimizing conduction losses and improving overall efficiency.
  • High Current Capability: With a continuous drain current (I<sub>D) of 100 A, this MOSFET can handle high current applications with ease.
  • 100 V Drain-to-Source Voltage: The device is rated for a maximum drain-to-source voltage (V<sub>DS) of 100 V, providing a wide safety margin for various circuit designs.
  • Fast Switching Performance: The fast switching characteristics of the PSMN015-100P ensure reduced switching losses and are suitable for high-frequency power switching applications.
  • Enhanced Thermal Performance: The MOSFET comes in a TO-220 package, which is known for its excellent thermal conduction abilities, ensuring the device remains cool under high power operation.

Applications

The PSMN015-100P MOSFET is versatile and can be utilized in various applications, including:

  • Power supplies and DC-DC converters
  • Motor drives and controllers
  • Automotive applications and power management systems
  • Switching regulators and load switches
  • High-performance computing and server power systems

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the PSMN015-100P is no exception. It is manufactured to meet the highest industry standards, ensuring long-term reliability and performance for critical applications. The device is also RoHS compliant, reflecting NXP's dedication to environmental sustainability.

In summary, the PSMN015-100P from NXP is a powerful and reliable MOSFET that offers excellent efficiency, fast switching, and high current handling capabilities, making it a top choice for engineers and designers across various industries.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6553 $57.9355
90+ $1.3583 $122.2470
135+ $1.3159 $177.6465
185+ $1.2734 $235.5790
235+ $1.2310 $289.2850
315+ $1.1036 $347.6340
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Availability: 7,800 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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