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PSMN040-200W

Part No PSMN040-200W
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 50A SOT429
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 183nC @ 10V
Max Input Capacitance 9530pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 045956-PSMN040-200W
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN040-200W CAD Model

Description

Introducing the PSMN040-200W Power MOSFET by NXP Semiconductors

The NXP PSMN040-200W is a state-of-the-art power MOSFET designed to deliver high performance in a wide range of applications. This device is part of NXP's extensive portfolio of metal-oxide-semiconductor field-effect transistors (MOSFETs) and is engineered to provide efficient power management and conversion.

Key Features

  • Low On-State Resistance: The PSMN040-200W features a low on-state resistance (R<sub>DS(on)) which minimizes conduction losses, enhances power efficiency, and ensures better thermal performance. This makes it ideal for high-efficiency power supplies and DC-DC converters.
  • High Current Capability: With the ability to handle high current levels, this MOSFET is well-suited for demanding applications such as motor control, power delivery for CPUs, GPUs, and servers.
  • Fast Switching Performance: The fast switching capabilities of the PSMN040-200W reduce switching losses and improve performance in high-frequency circuits.
  • Enhanced Thermal and Electrical Stability: The robust design ensures stability under a wide range of thermal and electrical conditions, contributing to the reliability and longevity of the end application.

Applications

The versatility of the PSMN040-200W MOSFET enables its use in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC converters
  • Power management for computer servers and telecommunications
  • Motor drives and inverters
  • Electronic Valve Control (EVC)
  • Automotive systems and more

Technical Specifications

The PSMN040-200W boasts impressive technical specifications, making it a leader in its class:

  • Drain-source voltage (V<sub>DS): 200V
  • Continuous drain current (I<sub>D): 40A
  • Power dissipation (P<sub>D): 110W
  • Operating temperature range: -55°C to 175°C

With its combination of efficiency, reliability, and power handling capabilities, the NXP PSMN040-200W is an excellent choice for designers looking to optimize their power systems. Whether it's for industrial, automotive, or computing applications, this MOSFET provides the performance and durability needed for today's demanding electronic environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.4135 $59.5485
27+ $4.4421 $119.9367
41+ $4.3035 $176.4435
56+ $4.1638 $233.1728
72+ $4.0252 $289.8144
96+ $3.6094 $346.5024
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 8,000 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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