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PSMN1R2-30YLC,115

Part No PSMN1R2-30YLC,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.95V @ 1mA
Max Gate Charge 78nC @ 10V
Max Input Capacitance 5093pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 215W (Tc)
Maximum Rds On at Id,Vgs 1.25 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 133313-PSMN1R2-30YLC,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN1R2-30YLC,115 CAD Model

Description

The PSMN1R2-30YLC,115 is a high-performance, N-channel MOSFET produced by NXP Semiconductors, a leader in the field of high-quality electronic components. This particular model is designed to offer efficient power management and conversion in a wide array of applications. Its compact and low-resistance package makes it an ideal choice for space-constrained and power-sensitive designs.

Key Features

  • Low On-Resistance: The device features an extremely low on-state resistance (R<sub>DS(on)) of 1.2 mΩ at a gate drive of 10 V, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Continuous Drain Current: It can handle a continuous drain current (I<sub>D) of up to 100 A, making it suitable for high current applications.
  • Enhanced Power Density: With its LFPAK56 (Power-SO8) package, the PSMN1R2-30YLC,115 offers a reduced footprint and an enhanced power density.
  • High-Speed Switching: The MOSFET is optimized for fast switching, which is essential for reducing switching losses in applications like switch-mode power supplies and DC-DC converters.
  • 100% Avalanche Tested: Ensuring reliability, this product is subjected to rigorous avalanche testing, affirming its ruggedness in the face of high-energy pulses.
  • Logic Level Gate Drive: It can be driven directly from logic level voltages, simplifying the drive circuitry in many applications.

Applications

The PSMN1R2-30YLC,115 is versatile and can be used in a variety of applications, including:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Computing
  • Automotive systems
  • Power tool controls

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The PSMN1R2-30YLC,115 MOSFET is no exception, providing robust performance for industrial and commercial electronic devices. With its advanced technology and stringent testing, users can expect consistent and dependable operation over a wide range of conditions.

Environmental Compliance

This product is RoHS compliant and free from environmentally hazardous substances, aligning with global efforts to reduce the environmental impact of electronic components.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1034 $55.1700
115+ $0.9054 $104.1210
175+ $0.8771 $153.4925
240+ $0.8488 $203.7120
305+ $0.8205 $250.2525
410+ $0.7356 $301.5960
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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