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PSMN1R7-60BS,118

Part No PSMN1R7-60BS,118
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 120A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 137nC @ 10V
Max Input Capacitance 9997pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 306W (Tc)
Maximum Rds On at Id,Vgs 2 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 137420-PSMN1R7-60BS,118
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN1R7-60BS,118 CAD Model

Description

Product Overview: PSMN1R7-60BS,118 – NXP Semiconductors

The PSMN1R7-60BS,118 is a high-performance, N-channel MOSFET produced by NXP Semiconductors, a leader in the field of high-quality electronic components. This MOSFET is part of NXP's extensive range designed to deliver efficiency and reliability for a wide array of applications.

Key Features

  • Low RDS(on): The device boasts a low on-state resistance of just 1.7 mΩ, which minimizes conduction losses and improves overall efficiency.
  • High Continuous Drain Current (ID): With a continuous drain current of 100 A, this MOSFET can handle high current applications with ease.
  • 60V Drain-Source Voltage (VDS): The 60V rating for drain-source voltage makes it suitable for a broad range of power applications.
  • Fast Switching Speed: The device is designed for fast switching, reducing switching losses and improving performance in high-frequency circuits.
  • Enhanced Power Density: Its compact size contributes to a higher power density, making it ideal for space-constrained applications.
  • Robust Thermal Performance: It exhibits excellent thermal characteristics, ensuring reliability even under high-temperature conditions.

Applications

The PSMN1R7-60BS,118 is versatile and can be used in various applications, including:

  • Power supply units
  • DC-DC converters
  • Motors and motor control systems
  • Automotive applications
  • Switching regulators
  • Power management solutions

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the PSMN1R7-60BS,118 is no exception. It is designed to meet the stringent requirements of the automotive industry, ensuring high reliability and performance under harsh conditions.

Environmental Compliance

This product is compliant with RoHS (Restriction of Hazardous Substances) directives, which means it is manufactured with a focus on environmental protection and user safety.

For engineers and designers looking for a robust, efficient, and reliable N-channel MOSFET, the PSMN1R7-60BS,118 from NXP Semiconductors is an excellent choice that balances performance with durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.7518 $52.2842
45+ $2.2579 $101.6055
69+ $2.1874 $150.9306
95+ $2.1168 $201.0960
123+ $2.0463 $251.6949
164+ $1.8346 $300.8744
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Availability: 4,800 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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