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PSMN6R0-30YL,115

Part No PSMN6R0-30YL,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 79A LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.15V @ 1mA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 1425pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 55W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 139883-PSMN6R0-30YL,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN6R0-30YL,115 CAD Model

Description

Product Overview: PSMN6R0-30YL,115

The PSMN6R0-30YL,115 is a high-performance, N-channel TrenchMOS™ transistor designed and manufactured by NXP Semiconductors. This power MOSFET is engineered for optimal efficiency and reliability, making it an ideal choice for a wide range of applications, including switch-mode power supplies, DC-DC converters, motor drives, and other power management tasks.

Key Features

  • Low On-State Resistance (R<sub>DS(on)): The device offers a very low on-state resistance of 6 mΩ at V<sub>GS = 10 V, reducing conduction losses and improving overall efficiency.
  • High Continuous Drain Current (I<sub>D): It can handle a high continuous drain current up to 100 A, making it suitable for high-power applications.
  • High-Speed Switching: With fast switching capabilities, the PSMN6R0-30YL,115 minimizes switching losses and enables high-frequency operation.
  • Enhanced Thermal Performance: The package design ensures excellent thermal performance, allowing for better heat dissipation and increased reliability.
  • Logic Level Gate Drive: The device can be driven directly from logic level sources, simplifying the drive circuitry and reducing component count.

Electrical Characteristics

  • Drain-Source Voltage (V<sub>DS): 30 V
  • Gate-Source Voltage (V<sub>GS): ±20 V
  • Threshold Voltage (V<sub>th): Typically 2.5 V at I<sub>D = 1 mA

Applications

The versatility of the PSMN6R0-30YL,115 MOSFET allows it to be utilized in a variety of applications, including but not limited to:

  • Power management circuits in computers and laptops
  • DC-DC converters for telecommunications and industrial systems
  • Motor control circuits in automotive and consumer electronics
  • LED lighting systems
  • Load switching and battery management in portable devices

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The PSMN6R0-30YL,115 MOSFET is no exception, with its robust design and rigorous testing ensuring consistent performance across a variety of conditions.

With its combination of efficiency, power-handling capability, and thermal performance, the PSMN6R0-30YL,115 from NXP Semiconductors stands out as a superior choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.9563 $65.7378
13+ $8.9905 $116.8765
20+ $8.7087 $174.1740
28+ $8.4280 $235.9840
36+ $8.1474 $293.3064
48+ $7.3042 $350.6016
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Availability: 8,400 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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