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2N7002ET1G

Part No 2N7002ET1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 260MA SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 0.81nC @ 5V
Max Input Capacitance 26.7pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300mW (Tj)
Maximum Rds On at Id,Vgs 2.5 Ohm @ 240mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 005720-2N7002ET1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Consumer Electronics
Family Name 2N7002E
Introduction Date April 03, 2007
ECCN EAR99
Country of Origin China, Taiwan
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian 2N7002ET1G CAD Model

Description

ON Semiconductor 2N7002ET1G N-Channel MOSFET

The ON Semiconductor 2N7002ET1G is a versatile and high-performance N-Channel MOSFET that is designed to meet the requirements of a wide range of electronic applications. This small signal MOSFET is known for its low on-resistance and high switching speed, making it an ideal choice for power management in portable and battery-powered devices, as well as for load switch and power conversion applications.

Constructed with advanced trench technology, the 2N7002ET1G offers improved electrical characteristics, which include a low threshold voltage, typically at 2.1V, allowing it to operate efficiently at low gate drive voltages. This feature is particularly beneficial for low-voltage applications where power efficiency is critical.

The device is housed in a compact SOT-23 package, which is designed for surface-mount technology (SMT), making it suitable for high-density PCB designs. Despite its small size, it can handle continuous drain currents up to 115mA and pulsed drain currents of 460mA, while withstanding drain-source voltages of up to 60V. This robustness is complemented by its low RDS(on) of 7.5 Ohms, which minimizes power losses during operation.

Furthermore, the 2N7002ET1G features a fast switching speed, with a turn-on delay time of only 3ns and a turn-off delay time of 9ns, which is critical for high-speed circuit designs. Its fast switching characteristics also help in reducing switching losses, contributing to overall system efficiency.

For safety and reliability, the 2N7002ET1G includes built-in protection features such as a robust gate oxide layer and source-drain diode protection. These features ensure the MOSFET's stability and longevity even under stressful conditions. The device is also RoHS compliant, which means it is manufactured without the use of hazardous substances, aligning with environmental regulations and standards.

In summary, the ON Semiconductor 2N7002ET1G N-Channel MOSFET is a high-performance component that offers excellent efficiency, fast switching, and a compact form factor, making it a top choice for designers looking to optimize their electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,880+ $0.0266 $50.0080
4,570+ $0.0219 $100.0830
7,080+ $0.0212 $150.0960
9,760+ $0.0205 $200.0800
12,630+ $0.0198 $250.0740
16,855+ $0.0178 $300.0190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 327,000 pieces
MOQ: 1880 pcs
Order Increment : 1 pcs
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