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Part No 2N7002LT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 0.115A SOT-23

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Pricing & Ordering $0.1005 Historical reference price : is the price that a customer announces that it is willing to pay for this component in the previous period, only for reference.
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Availability: 4,000,000 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Input Capacitance 50pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 225mW (Ta)
Maximum Rds On at Id,Vgs 7.5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 005727-2N7002LT1G
Family Name 2N7002L
Introduction Date December 02, 2003
Country of Origin China, United States of America
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 36 pct.
Supply and Demand Status Sufficient
Alternative Parts
2N7002LT1;  2N7002AK;  2V7002LT3G;  


ON Semiconductor 2N7002LT1G N-Channel MOSFET

The ON Semiconductor 2N7002LT1G is a high-performance, small-signal N-Channel MOSFET that provides efficient power control and switching capabilities in a compact SOT-23 package. This versatile transistor is designed to address the needs of a wide range of applications, from power management to load switching, making it a popular choice among engineers and designers for its reliability and efficiency.

Key Features:

  • Low Threshold Voltage: The 2N7002LT1G features a low gate threshold voltage, typically around 2.1V, which allows it to be easily driven by logic-level voltages, making it suitable for interfacing with microcontrollers and other digital circuits.
  • High Current Capability: Despite its small size, this MOSFET can handle continuous drain currents up to 115 mA, and pulsed drain currents of 800 mA, making it capable of handling moderate power loads.
  • High-Speed Switching: With fast switching speeds, the 2N7002LT1G is ideal for high-frequency applications, offering reduced switching losses and improved overall efficiency.
  • Low On-Resistance: The low RDS(on) of this MOSFET minimizes conduction losses and helps in achieving higher efficiency in power conversion and management applications.
  • Enhanced Device Protection: Built-in ESD protection ensures that the MOSFET remains safe from electrostatic discharges, enhancing its reliability and lifespan.


The 2N7002LT1G is widely used in a variety of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Battery Management Systems
  • Motor Control Modules
  • Relay and Solenoid Drivers
  • LED Drivers

ON Semiconductor's commitment to quality ensures that the 2N7002LT1G MOSFET meets the stringent requirements of modern electronic devices. With its compact footprint, this MOSFET is particularly well-suited for space-constrained applications, providing a high level of performance without compromising on space or power efficiency. Whether you're designing a power supply, a motor control circuit, or any other application that requires efficient switching, the 2N7002LT1G is an excellent choice that combines performance, reliability, and versatility.

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