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2SA1318

Part No 2SA1318
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Trans GP BJT PNP 50V 0.2A 500mW 3-Pin NP
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer ON Semiconductor
Win Source Part Number 153543-2SA1318
Popularity Low
Supply and Demand Status Balance
Family Name 2SA1318
Introduction Date February 13, 2001
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SA1318 CAD Model

Description

2SA1318 Silicon PNP Transistor from ON Semiconductor

The 2SA1318 is a high-quality silicon PNP transistor designed and manufactured by ON Semiconductor, a trusted leader in the semiconductor industry. This component is well-suited for applications requiring low-frequency power amplification and switching, making it a versatile choice for a wide range of electronic circuits.

Key Features and Benefits

  • Low Saturation Voltage: The 2SA1318 boasts a low collector-to-emitter saturation voltage, which enhances its efficiency in power amplification applications by minimizing power loss during operation.
  • High Current Gain Bandwidth Product: With its high current gain bandwidth product, this transistor is capable of operating effectively at higher frequencies, which is beneficial for various audio and signal processing tasks.
  • Complementary Design: The 2SA1318 is designed to be complementary to ON Semiconductor's NPN transistors, such as the 2SC3467, allowing for the creation of efficient push-pull amplifier configurations.
  • Reliability: ON Semiconductor is known for its commitment to quality, and the 2SA1318 is no exception. It is built to deliver reliable performance over a wide range of operating conditions.
  • Compact Package: The transistor comes in a small, easy-to-mount package, making it suitable for use in space-constrained applications.

Applications

The 2SA1318 is commonly used in a variety of applications, including:

  • Audio frequency amplifier stages
  • Low-frequency power amplifiers
  • Signal processing circuits
  • Switching applications
  • Driver stages in hi-fi amplifiers and television circuits

Technical Specifications

The 2SA1318 has the following key specifications:

  • Collector-Emitter Voltage (VCEO): -50 V
  • Collector Current (IC): -1 A
  • Power Dissipation (PD): 900 mW
  • Transition Frequency (fT): 120 MHz
  • Operating and Storage Junction Temperature Range: -55°C to +150°C

For engineers and designers looking for a reliable PNP transistor that offers both performance and versatility, the 2SA1318 from ON Semiconductor is an excellent choice. Its combination of low saturation voltage, high current gain bandwidth, and complementary design with NPN transistors provides a solid foundation for numerous electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1146 $61.3030
130+ $0.9148 $118.9240
200+ $0.8859 $177.1800
270+ $0.8570 $231.3900
350+ $0.8293 $290.2550
470+ $0.7427 $349.0690
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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