2SA1708T-AN PNP Transistor by ON Semiconductor

The 2SA1708T-AN is a high-performance PNP transistor manufactured by ON Semiconductor, known for its reliability and efficiency in a wide range of electronic applications. This bipolar junction transistor is designed for general-purpose amplification and switching, making it a versatile component for designers and engineers.

Key Features:

• Type: PNP Bipolar Junction Transistor (BJT)
• Package: Comes in a compact SOT-23 package, ideal for space-constrained applications.
• Collector-Emitter Voltage (VCEO): Capable of withstanding up to -50V, providing ample headroom for various circuit designs.
• Collector Current (IC): Can handle a continuous collector current of up to -150 mA, suitable for moderate power requirements.
• Gain Bandwidth Product (fT): Features a transition frequency of 120 MHz, enabling its use in high-frequency signal amplification.
• DC Current Gain (hFE): Boasts a high DC current gain with a range typically between 120 to 560, ensuring efficient current amplification.
• Low Saturation Voltage: Exhibits low collector-emitter saturation voltage, which enhances overall power efficiency.
• RoHS Compliant: Meets the Restriction of Hazardous Substances (RoHS) directive, making it environmentally friendly and suitable for use in various global markets.

Applications:

The 2SA1708T-AN is ideal for a variety of applications due to its general-purpose nature. It is commonly used in:

• Audio amplifiers and preamplifiers
• Signal processing circuits
• Power management systems
• Switching circuits
• Driver stages in hi-fi systems
• Various consumer electronics

With its combination of high voltage and current capabilities, along with a high gain bandwidth product, the 2SA1708T-AN from ON Semiconductor is a solid choice for designers looking for a dependable PNP transistor. Its compact size, power efficiency, and RoHS compliance further enhance its appeal for modern electronic designs.