The 2SB1140T is a PNP bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This high-quality electronic component is designed for use in a range of applications, including audio frequency amplifier stages and various switching applications. With its robust performance characteristics, the 2SB1140T is a reliable choice for designers and engineers looking to enhance their electronic designs.

Key Features

• PNP Bipolar Junction Transistor: The 2SB1140T is a PNP transistor, which means it is primarily used for high-side switching and can be turned on by sinking current into its base terminal.
• High Current Capacity: This transistor is capable of handling a continuous collector current (Ic) of up to 1A, making it suitable for moderate power applications.
• Low Saturation Voltage: The low collector-emitter saturation voltage (Vce(sat)) helps in reducing power loss and improving efficiency in saturation-driven applications.
• High Power Dissipation: With a power dissipation (Pd) of up to 900mW, the 2SB1140T can withstand and dissipate the heat generated during operation effectively.
• Complementary NPN Type Available: For applications requiring complementary pairs, ON Semiconductor provides the 2SD1664T NPN transistor, which pairs well with the 2SB1140T.

Electrical Characteristics

• Collector-Base Voltage (VCBO): -60V
• Collector-Emitter Voltage (VCEO): -50V
• Emitter-Base Voltage (VEBO): -5V
• Collector Current (IC): -1A
• Collector-Emitter Saturation Voltage (VCE(sat)): -0.5V (IC=-500mA, IB=-50mA)

Applications

The 2SB1140T is versatile and can be used in various electronic circuits. It is particularly well-suited for:

• Audio Amplifiers
• Signal Processing
• Power Management Functions
• Switching Regulators
• DC-DC Converters

ON Semiconductor's commitment to quality ensures that the 2SB1140T meets the stringent requirements of the electronics industry, offering reliable performance for both commercial and industrial applications.