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2SC3117S

Part No 2SC3117S
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANSISTOR / Bipolar (BJT) Transistor
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1037005-2SC3117S
Ultra Librarian 3D Model Ultra Librarian 2SC3117S CAD Model

Description

The 2SC3117S is a high-performance NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This transistor is specifically engineered to deliver efficient performance for a wide range of electronic applications, making it a versatile component for designers and engineers.

Key Features

  • High Current Gain: The 2SC3117S offers a high current gain (hFE), which ensures that a small input current can be amplified to a larger output current, making it ideal for amplification purposes.
  • Low Saturation Voltage: This transistor has a low collector-emitter saturation voltage, which contributes to reduced power loss and improved efficiency in electronic circuits.
  • Fast Switching Speed: With its quick switching capabilities, the 2SC3117S is suitable for applications that require rapid transitions between on and off states.
  • High Reliability: ON Semiconductor’s commitment to quality ensures that the 2SC3117S is reliable and performs consistently under various conditions.

Applications

The 2SC3117S is commonly used in a broad range of applications, including but not limited to:

  • Audio amplifiers and sound reinforcement systems
  • Signal processing
  • Switching regulators
  • Power management solutions
  • Motor control circuits

Technical Specifications

Below are some of the technical specifications for the 2SC3117S transistor:

  • Collector-Emitter Voltage (VCEO): Specified at a maximum value to ensure safe operation within a circuit.
  • Collector Current (IC): The maximum continuous collector current that the transistor can handle without damage.
  • Power Dissipation (PD): The maximum power the transistor can dissipate through heat without compromising its performance.
  • Operating Temperature Range: The range of ambient temperatures over which the transistor can operate reliably.

For detailed specifications and operational parameters, customers are advised to consult the official datasheet provided by ON Semiconductor. This ensures accurate information and the safe use of the 2SC3117S in their electronic projects.

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