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IRLMS4502

Part No IRLMS4502
Manufacturer International Rectifier
Catalog Transistors - FETs, MOSFETs - RF
Description HEXFET Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer INTERNATIONAL RECTIFIER
Win Source Part Number 1188597-IRLMS4502
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLMS4502 CAD Model

Description

The IRLMS4502 is a P-Channel HEXFET® Power MOSFET from International Rectifier. It is designed for a wide range of power switching applications where high efficiency and compact size are crucial. This MOSFET utilizes advanced HEXFET® technology to achieve exceptionally low on-resistance and gate charge, contributing to reduced power losses and improved thermal performance.

Applications:

  • Load Switching: Used in various load switching applications in portable devices.
  • Battery Management: Found in battery management systems for efficient power control.
  • Power Management in Portable Devices: Suitable for power management in smartphones, tablets, and other portable electronics.
  • DC-DC Conversion: Can be employed in DC-DC converters for voltage regulation.

Features:

  • P-Channel MOSFET: P-channel configuration allows for easy implementation in high-side switching applications.
  • Low On-Resistance: Extremely low RDS(on) minimizes conduction losses, enhancing efficiency.
  • Low Gate Charge: Reduced gate charge (Qg) contributes to faster switching speeds and lower switching losses.
  • Logic-Level Gate Drive: Can be driven directly from logic-level signals, simplifying circuit design.
  • Surface Mount Package: Available in a small surface mount package for space-saving designs.

Benefits:

  • High Efficiency: Minimizes power losses, leading to cooler operation and extended battery life in portable devices.
  • Compact Design: Small footprint allows for integration into densely populated circuit boards.
  • Simplified Circuit Design: Logic-level gate drive simplifies the interface with control circuitry.
  • Improved Thermal Performance: Low on-resistance reduces heat generation, enhancing reliability.

Additional Details:

The IRLMS4502 typically features a drain-source voltage (Vds) rating suitable for low voltage applications. Its static drain-source on-resistance RDS(on) is very low, often in the milliohm range, ensuring minimal voltage drop and power dissipation during conduction. The gate threshold voltage (Vgs(th)) is designed to be compatible with logic-level signals, facilitating direct control from microcontrollers or other digital devices. It is commonly available in a SOT-23 package, which is ideal for high-density PCB layouts. The device's fast switching speed is beneficial in applications requiring rapid response times. The MOSFET is designed to operate within a specified temperature range, ensuring stable performance under varying environmental conditions. This MOSFET is lead-free and RoHS compliant, aligning with environmental regulations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
295+ $0.1964 $57.9380
715+ $0.1617 $115.6155
1,115+ $0.1559 $173.8285
1,530+ $0.1513 $231.4890
1,970+ $0.1467 $288.9990
2,655+ $0.1305 $346.4775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 295 pcs
Order Increment : 1 pcs
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