The 2SC4134T-TL-E from ON Semiconductor is a high-performance NPN bipolar transistor designed for use in a wide range of electronic applications. This versatile component is known for its efficiency and reliability, making it an ideal choice for designers looking to improve their circuit designs.

Key Features

• Transistor Type: NPN - This transistor uses a negative-positive-negative configuration which is commonly used in amplification and switching applications.
• Collector-Emitter Voltage (VCEO): 50V - The maximum voltage between the collector and emitter terminals can handle 50 volts, providing a good voltage range for various electronic circuits.
• Collector-Base Voltage (VCBO): 60V - With a collector-base voltage of 60V, this transistor can tolerate higher voltage spikes, enhancing its robustness in circuits.
• Emitter-Base Voltage (VEBO): 7V - The emitter-base voltage rating ensures stable operation when the transistor is in reverse-biased mode.
• Continuous Collector Current (IC): 1A - The transistor can continuously conduct up to 1 ampere of collector current, suitable for a range of power applications.
• Power Dissipation (Pd): 1W - This power rating indicates the amount of heat the transistor can dissipate without damage, allowing for reliable operation under normal conditions.
• DC Current Gain (hFE): 120 to 560 - The transistor provides a substantial current gain, making it effective for amplifying weak signals.
• Package / Case: TP-FA - The TP-FA package is compact and surface-mountable, saving valuable board space and enabling automated assembly processes.

Applications

The 2SC4134T-TL-E is suitable for a variety of applications including, but not limited to:

• Power management circuits
• Switching regulators
• DC-DC converters
• Audio amplifiers
• Signal amplification

Summary

ON Semiconductor's 2SC4134T-TL-E NPN bipolar transistor is a robust and efficient solution for designers seeking a reliable transistor with a good balance of voltage and current handling capabilities. Its compact form factor and high current gain make it an excellent choice for a wide array of electronic applications, particularly where space and efficiency are of concern.