The ON Semiconductor 2SC4135T-E is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide variety of electronic applications. This device is well-suited for high-speed switching and amplification tasks, providing users with a reliable and efficient component for their circuit designs.

Key Features:

• High Current Gain Bandwidth Product: With a fT of 100 MHz, this transistor is capable of operating at high frequencies, making it ideal for audio amplifiers, signal processing, and other high-speed applications.
• Low Collector-Emitter Saturation Voltage: The low V<sub>CE(sat) ensures efficient operation with minimal power loss, which is critical for power-sensitive designs.
• High Collector Current: The device can handle a continuous collector current (I<sub>C) of up to 1 A, allowing for a wide range of power handling capabilities.
• Complementary PNP Type Available: For applications requiring a complementary BJT pair, ON Semiconductor offers a PNP counterpart, enabling designers to create push-pull configurations with ease.

Applications:

The 2SC4135T-E transistor is versatile and can be used in various applications, including:

• Power Management Circuits
• Audio Amplifiers
• Signal Processing
• Switching Regulators
• Driver Stages in Hi-Fi Amplifiers

Package and Quality:

Enclosed in a TO-220 package, the 2SC4135T-E ensures a robust and durable design that can withstand the rigors of daily operation. ON Semiconductor is committed to the highest standards of quality, and this transistor is no exception, meeting rigorous industry specifications for performance and reliability.

Environmentally Friendly:

ON Semiconductor is dedicated to environmental stewardship. The 2SC4135T-E transistor is designed and manufactured with a lead-free finish, making it compliant with RoHS directives. This commitment helps customers create eco-friendly products while maintaining high standards of performance.