The ON Semiconductor 2SC4211-7 is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile component is well-suited for switching and amplification purposes, making it an essential part of various circuits in both commercial and industrial environments.

Key Features

• High Current Gain Bandwidth Product: The 2SC4211-7 offers a high fT, providing excellent performance in high-frequency applications.
• Low Saturation Voltage: This transistor is engineered to have a low V<sub>CE(sat), which enhances efficiency by reducing power loss during operation.
• High Power Dissipation: With its ability to dissipate high levels of power, the 2SC4211-7 can handle more demanding applications that require robust performance.
• Compact Package: Enclosed in a small and durable package, this transistor is suitable for space-constrained applications without sacrificing performance.

Applications

The 2SC4211-7 is ideal for a variety of applications, including:

• Audio frequency amplifier stages
• Power management circuits
• Signal processing
• Switching regulators
• Driver stages in high-fidelity amplifiers and sound systems

Specifications

Parameter Value Collector-Emitter Voltage (V<sub>CEO) 50 V Collector-Base Voltage (V<sub>CBO) 60 V Emitter-Base Voltage (V<sub>EBO) 7 V Collector Current (I<sub>C) 1 A Total Device Dissipation (P<sub>D) 900 mW Junction Temperature (T<sub>j) -55 to +150 °C

Overall, the ON Semiconductor 2SC4211-7 NPN transistor is a reliable and efficient choice for designers and engineers looking to incorporate a robust electronic switching or amplification component into their systems.