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2SC6099-TL-E

Part No 2SC6099-TL-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 100V 2A TP-FA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 165mV @ 100mA, 1A
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 300 @ 100mA, 5V
Maximum Power Dissipation 800mW
Frequency - Transition 300MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 2-TP-FA
Win Source Part Number 005935-2SC6099-TL-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC6099-TL-E CAD Model

Description

ON Semiconductor 2SC6099-TL-E Bipolar Transistor

The 2SC6099-TL-E from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This transistor is known for its reliability and efficiency, making it an ideal choice for designers looking to implement a robust component in their electronic circuits.

Constructed with ON Semiconductor's advanced manufacturing technologies, the 2SC6099-TL-E offers excellent power handling capabilities with a collector-emitter voltage (VCEO) of 20V, ensuring stable operation in various circuit configurations. Its collector current rating of 1A allows for substantial current flow through the device, which is essential for power amplification and switching applications.

The device comes in a compact SOT-89 package, which not only saves valuable board space but also provides good thermal performance. This packaging, combined with a low collector saturation voltage (VCE(sat)), enhances the transistor's overall energy efficiency, making it a suitable choice for portable and power-sensitive designs.

With a transition frequency (fT) of 180MHz, the 2SC6099-TL-E is capable of operating at high frequencies, which is beneficial for applications in RF and high-speed switching environments. Additionally, the transistor features a high gain-bandwidth product, which enables it to maintain gain over a wide frequency range, thus supporting its use in amplifiers and oscillators.

The 2SC6099-TL-E is also characterized by its low output capacitance and high forward current transfer ratio (hFE), which contribute to its excellent signal amplification properties. This makes it a versatile component suitable for audio amplifiers, signal processing, and general-purpose switching circuits.

ON Semiconductor's commitment to quality ensures that the 2SC6099-TL-E transistor meets stringent standards, providing designers with a reliable and durable component. Its performance characteristics and packaging make it an excellent choice for a broad spectrum of applications, from consumer electronics to industrial control systems.

In conclusion, the ON Semiconductor 2SC6099-TL-E is a transistor that offers a balanced combination of power handling, efficiency, and high-frequency performance, making it a valuable addition to any electronic project requiring a robust NPN BJT.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7169 $50.1830
170+ $0.5883 $100.0110
265+ $0.5699 $151.0235
365+ $0.5515 $201.2975
470+ $0.5331 $250.5570
630+ $0.4780 $301.1400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,095 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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