ON Semiconductor 2SD1801T-E NPN Bipolar Transistor

The ON Semiconductor 2SD1801T-E is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This transistor is known for its high current capacity and low voltage operation, making it an ideal choice for power amplification and switching applications.

Key Features

• Transistor Type: NPN
• Collector-Emitter Voltage (VCEO): 50V
• Collector-Base Voltage (VCBO): 60V
• Emitter-Base Voltage (VEBO): 7V
• Collector Current (IC): 3A
• Power Dissipation (Pd): 1W
• DC Current Gain (hFE): 100 to 320 at 500mA
• Operating and Storage Junction Temperature Range: -55 to +150°C
• Package Type: TO-252 (DPAK)

Applications

The 2SD1801T-E transistor is versatile and can be used in various applications, including:

• Power management circuits
• DC-DC converters
• Motor control circuits
• Audio amplifiers
• Switching regulators
• Driver stages in hi-fi amplifiers and television circuits

Product Advantages

ON Semiconductor's 2SD1801T-E offers several advantages for designers and engineers. Its low saturation voltage reduces on-state losses, improving efficiency in electronic circuits. The high current gain bandwidth product enhances performance in amplification applications. Additionally, the TO-252 package is designed for surface mount technology, which allows for compact PCB layouts and simplified assembly processes.

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability. The 2SD1801T-E transistor is built to meet rigorous standards, ensuring stable performance and a long operational lifespan even under challenging conditions. It is RoHS compliant, reflecting ON Semiconductor's dedication to environmental sustainability.

Whether you're designing power supplies, consumer electronics, or industrial equipment, the 2SD1801T-E from ON Semiconductor is a robust and reliable component that will enhance the performance and efficiency of your electronic designs.