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2SD1804S

Part No 2SD1804S
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Trans GP BJT NPN 50V 8A 1000mW 3-Pin(3+Tab) TP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer ON Semiconductor
Win Source Part Number 157888-2SD1804S
Popularity Low
Supply and Demand Status Limited
Family Name 2SD1804S
Introduction Date April 23, 2006
ECCN EAR99
Estimated EOL Date Not Applicable
Ultra Librarian 3D Model Ultra Librarian 2SD1804S CAD Model

Description

The 2SD1804S from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed to deliver efficient power control and amplification in various electronic applications. This transistor is well-suited for use in power switching circuits, as well as for driving motors, relays, and other inductive loads. It features a robust design that ensures reliability and stability over a wide range of operating conditions.

Key Features

  • High Current Capacity: The 2SD1804S is capable of handling high current flows, making it an excellent choice for power-intensive applications.
  • Low Saturation Voltage: This transistor offers a low collector-emitter saturation voltage, which translates to reduced power loss and improved efficiency in switching applications.
  • High-Speed Switching: Designed with high-speed switching in mind, the 2SD1804S can switch on and off rapidly, which is essential for applications requiring fast response times.
  • Complementary PNP Type Available: There is a complementary PNP type transistor available, allowing for the creation of push-pull amplifier configurations and other complementary pair applications.

Applications

The versatile nature of the 2SD1804S makes it suitable for a wide range of applications, including:

  • Power supply circuits
  • DC-DC converters
  • Motor control circuits
  • Audio amplifiers
  • Switching regulators
  • General-purpose switching and amplification

Electrical Characteristics

Some of the key electrical characteristics of the 2SD1804S include a collector-base voltage (VCBO) of 60V, collector-emitter voltage (VCEO) of 50V, and collector current (IC) of 3A. It has a power dissipation (PD) of 1W, which ensures that the device can handle a significant amount of power without overheating.

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability, and the 2SD1804S is no exception. It is manufactured to meet stringent standards, ensuring that it performs consistently across various temperatures and operating conditions. This makes the 2SD1804S a reliable choice for designers and engineers looking for a dependable transistor for their electronic projects.

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