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2SJ485-E

Part No 2SJ485-E
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description PCH 4V DRIVE SERIES / RF Mosfet
Sample
Rohs State Need to verify
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1156467-2SJ485-E
Ultra Librarian 3D Model Ultra Librarian 2SJ485-E CAD Model

Description

ON Semiconductor 2SJ485-E P-Channel MOSFET

The ON Semiconductor 2SJ485-E is a high-performance P-Channel MOSFET that offers a blend of efficiency and reliability for a wide range of applications. This power MOSFET is designed to handle high currents and voltages with ease, making it an ideal choice for power management tasks in both commercial and industrial settings.

Constructed with advanced semiconductor technology, the 2SJ485-E boasts impressive features that contribute to its superior performance. With a drain-source voltage (V<sub>DS) of -60V and a continuous drain current (I<sub>D) of -20A, this device can manage significant power without compromising on efficiency. Its low on-state resistance (R<sub>DS(on)) minimizes power losses and ensures a more energy-efficient operation.

One of the key attributes of the 2SJ485-E is its robust thermal performance. The MOSFET is encapsulated in a TO-252 (DPAK) package, which is known for its excellent heat dissipation properties. This ensures that the device operates within a safe temperature range, even under heavy loads, which enhances its longevity and reliability.

Furthermore, the 2SJ485-E is characterized by its fast switching speed, which is critical for applications requiring quick response times. This makes it suitable for use in switching regulators, DC-DC converters, and motor control circuits, among others. Its fast switching capabilities also contribute to reduced switching losses, which is beneficial for improving overall system efficiency.

In terms of protection features, the 2SJ485-E includes built-in safeguards such as gate-source voltage (V<sub>GS) protection and a rugged gate oxide layer. These features help to prevent damage from over-voltage conditions and ensure the MOSFET's stable operation over its lifetime.

Overall, the ON Semiconductor 2SJ485-E P-Channel MOSFET is a versatile and durable component that offers a combination of high power handling, efficiency, and protection features. It is a reliable choice for designers and engineers looking to optimize their power management systems with a component that delivers consistent performance under a variety of conditions.

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