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2SJ646-TL-E

Part No 2SJ646-TL-E
Manufacturer ON Semiconductor
Catalog JFETs (Junction Field Effect)
Description Trans MOSFET P-CH Si 30V 8A 3-Pin(2+Tab) TP-FA
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer ON Semiconductor
Win Source Part Number 158824-2SJ646-TL-E
Popularity Low
Supply and Demand Status Sufficient
Family Name 2SJ646
Introduction Date June 15, 2005
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Not Applicable
Ultra Librarian 3D Model Ultra Librarian 2SJ646-TL-E CAD Model

Description

ON Semiconductor 2SJ646-TL-E P-Channel MOSFET

The 2SJ646-TL-E is a high-performance P-Channel MOSFET produced by ON Semiconductor, a leading manufacturer in the field of power and signal management, logic, discrete, and custom devices. Designed to provide efficient power management and signal processing in a variety of applications, this MOSFET is a preferred choice for designers who require reliable and robust components.

Constructed with advanced semiconductor technology, the 2SJ646-TL-E offers a drain-to-source voltage (Vdss) of -60V and a continuous drain current (Id) of -6A, which makes it suitable for moderate power applications. The device features a low on-state resistance (Rds(on)) of 0.1Ω, which translates to reduced power loss and improved energy efficiency when the MOSFET is in operation.

One of the key advantages of the 2SJ646-TL-E is its small surface-mount package, the TP-FA, which allows for a compact design footprint. This is particularly beneficial in space-constrained applications where board real estate is at a premium. The package is also lead-free and RoHS compliant, ensuring that the product meets current environmental standards and regulations for electronic components.

The MOSFET's fast switching speed is another noteworthy feature, enabling high-frequency operation that is essential in modern electronic circuits. This makes the 2SJ646-TL-E an excellent choice for applications such as DC/DC converters, power management in portable devices, and motor control circuits.

Furthermore, the 2SJ646-TL-E is equipped with built-in gate protection diodes, which provide enhanced protection against electrostatic discharge (ESD) and other potentially damaging voltage transients. This level of protection is crucial for maintaining the longevity and reliability of the device in harsh electrical environments.

In summary, the ON Semiconductor 2SJ646-TL-E P-Channel MOSFET is a versatile and efficient component that offers a combination of low power loss, high-speed switching, and compact packaging. Its robust design and built-in protection features make it a smart choice for engineers and designers looking to optimize their power management and signal processing applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3226 $50.0030
380+ $0.2647 $100.5860
590+ $0.2564 $151.2760
810+ $0.2482 $201.0420
1,045+ $0.2399 $250.6955
1,395+ $0.2151 $300.0645
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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