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2SJ652-1E

Part No 2SJ652-1E
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 28A TO-220FP-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 28A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Max Gate Charge 80nC @ 10V
Max Input Capacitance 4360pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta), 30W (Tc)
Maximum Rds On at Id,Vgs 38 mOhm @ 14A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F-3SG
Dimension TO-220-3 Full Pack
Win Source Part Number 108024-2SJ652-1E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SJ652-1E CAD Model

Description

The 2SJ652-1E is a high-performance P-Channel MOSFET brought to you by ON Semiconductor, a renowned leader in power and signal management. This particular MOSFET is designed to deliver efficient power control and switching in a wide range of electronic applications.

Key Features

  • Low On-Resistance: The 2SJ652-1E boasts a low on-resistance, which ensures minimal power loss and heat generation when the device is conducting.
  • High-Speed Switching: With its ability to switch on and off rapidly, this MOSFET is ideal for high-frequency applications, contributing to more efficient power conversion and control.
  • Voltage Rating: It is designed to handle a drain-source voltage (V<sub>DS) of up to -60 V, making it suitable for a broad range of applications that require high breakdown voltage.
  • Current Capacity: The 2SJ652-1E can support a continuous drain current (I<sub>D) of up to -20 A, allowing it to drive significant loads.
  • Low Gate Charge: A reduced gate charge facilitates lower switching losses and improves the overall efficiency of the device.
  • Enhanced Durability: ON Semiconductor's rigorous manufacturing standards ensure that this MOSFET offers enhanced durability and reliability, even under challenging conditions.

Applications

The versatility of the 2SJ652-1E makes it suitable for a multitude of applications, including:

  • Power Management Systems
  • DC/DC Converters
  • Motor Drives
  • Load Switching
  • Battery Management Systems
  • Switch Mode Power Supplies (SMPS)

Quality and Environmental Compliance

ON Semiconductor is committed to environmental stewardship and the 2SJ652-1E is no exception. It complies with RoHS (Restriction of Hazardous Substances) standards, ensuring that it is free from harmful substances and is environmentally friendly.

Conclusion

The 2SJ652-1E from ON Semiconductor is a robust and reliable P-Channel MOSFET that offers high efficiency, fast switching, and a strong current capacity. Its compliance with environmental standards and its suitability for a range of applications make it an excellent choice for designers looking for a high-quality power switching solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.1428 $55.7140
11+ $9.1429 $100.5719
17+ $8.8571 $150.5707
24+ $8.5714 $205.7136
31+ $8.2857 $256.8567
41+ $7.4286 $304.5726
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 900 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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