2SK4177-DL-1E - N-Channel MOSFET from ON Semiconductor

The 2SK4177-DL-1E is a high-performance N-Channel MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is a crucial component for power management in a wide range of electronic applications due to its robustness and efficiency.

Key Features

• Low On-Resistance: The 2SK4177-DL-1E offers exceptionally low on-resistance, which enhances its efficiency in conducting electricity, leading to lower power losses and improved overall performance.
• High-Speed Switching: Designed for applications requiring high-speed switching, this MOSFET provides swift transitions, which is vital for reducing switching losses and improving the efficiency of power conversion systems.
• High-Voltage Tolerance: With a high breakdown voltage, the 2SK4177-DL-1E is capable of handling high voltages without compromising performance, making it suitable for a variety of demanding applications.
• Low Gate Charge: The device features a low gate charge, which minimizes the energy required to control the gate, thus reducing the power needed for the MOSFET to switch on and off.

Applications

The versatility of the 2SK4177-DL-1E allows it to be used in a wide array of applications, including:

• Power Supplies
• DC/DC Converters
• Motor Drives
• Automotive Applications
• Switching Regulators
• Power Management Systems

Product Specifications

The 2SK4177-DL-1E MOSFET is encapsulated in a TO-252 (DPAK) package, which is known for its compact size and ability to dissipate heat effectively. It has a drain-source voltage (Vdss) of up to 600V, a continuous drain current (Id) rating of 4A, and a power dissipation of 40W, making it a robust choice for high-power applications.

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The 2SK4177-DL-1E MOSFET is no exception, as it is designed to meet stringent quality standards, ensuring reliability and a long operational life for the devices it powers.