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2SK4177-DL-E

Part No 2SK4177-DL-E
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1500V 2A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1500V (1.5kV)
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 37.5nC @ 10V
Max Input Capacitance 380pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 80W (Tc)
Maximum Rds On at Id,Vgs 13 Ohm @ 1A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SMP-FD
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 197606-2SK4177-DL-E
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SK4177-DL-E CAD Model

Description

ON Semiconductor 2SK4177-DL-E N-Channel MOSFET

The ON Semiconductor 2SK4177-DL-E is a high-performance N-Channel MOSFET designed for a variety of applications that require efficient power management and high-speed switching capabilities. This robust semiconductor device is a perfect choice for designers looking to enhance system reliability and efficiency in power supply circuits, motor drives, and other electronic systems.

Key Features:

  • Low On-Resistance: The 2SK4177-DL-E features a low on-resistance, which minimizes power losses during operation, making it an energy-efficient solution for your circuit designs.
  • High-Speed Switching: With its capability for high-speed switching, this MOSFET can handle fast transition times, which is crucial for reducing switching losses and improving overall performance.
  • High Breakdown Voltage: A high breakdown voltage ensures that the device can withstand high voltage stresses, providing a reliable performance even under harsh conditions.
  • Gate Charge Optimization: The optimized gate charge of the 2SK4177-DL-E allows for reduced drive power, which is beneficial in applications where power efficiency is key.
  • Robust Thermal Performance: The device's package is designed to offer excellent thermal performance, ensuring that the MOSFET operates within safe temperature ranges during high power applications.

Applications:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Circuits
  • Power Management Systems
  • Automotive and Industrial Applications

The 2SK4177-DL-E from ON Semiconductor is a testament to the company's commitment to providing high-quality components that meet the rigorous demands of modern electronic systems. With its combination of low on-resistance, high-speed switching, and optimized gate charge, this MOSFET is an ideal choice for engineers who require a reliable and efficient power switching solution.

Whether you are designing power supplies, motor drives, or complex industrial systems, the 2SK4177-DL-E offers the performance and durability needed to ensure your projects succeed. Trust ON Semiconductor for your power management needs and experience the difference in quality and performance that the 2SK4177-DL-E can bring to your next project.

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