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AFGHL50T65SQD

Part No AFGHL50T65SQD
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description AEC 101 QUALIFIED, 650V, 50A FIE / IGBT Trench Field Stop 650 V 80 A 268 W Through Hole TO-247-3
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Manufacturer onsemi
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Power - Max 268 W
Switching Energy 950µJ (on), 460µJ (off)
Input Type Standard
Gate Charge 102 nC
Td (on/off) @ 25°C 20ns/81ns
Test Condition 400V, 50A, 4.7Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Supplier Device Package TO-247-3
Base Product Number AFGHL50
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 488-AFGHL50T65SQD
Standard Package 30
Win Source Part Number 1324947-AFGHL50T65SQD
Ultra Librarian 3D Model Ultra Librarian AFGHL50T65SQD CAD Model

Description

The AFGHL50T65SQD is a state-of-the-art field stop IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This high-performance IGBT is tailored for a variety of power applications, offering an optimal balance between switching speed and on-state loss, making it highly suited for high-efficiency power systems.

Key Features

  • High Current Capability: With a continuous collector current rating of 50A at 25°C, this IGBT can handle significant power levels, suitable for demanding applications.
  • Low On-State Voltage: The device boasts a low V<sub>CE(on) typ. of 1.70V, which contributes to reduced conduction losses and enhances overall system efficiency.
  • Fast Switching Speed: The AFGHL50T65SQD provides fast switching characteristics, which is crucial for reducing switching losses, especially in high-frequency operations.
  • High-Temperature Operation: Capable of operating at junction temperatures up to 175°C, this IGBT is designed for reliability and performance under high-temperature conditions.
  • Co-Packaged with Free Wheeling Diode: The device includes an anti-parallel diode, which helps to manage reverse recovery and simplifies circuit design.

Applications

The AFGHL50T65SQD is versatile and can be used in a wide range of applications, including:

  • Inverters and converters for renewable energy systems like solar inverters and wind turbine power converters.
  • Uninterruptible Power Supplies (UPS) that require high efficiency and reliability.
  • Motor drives for industrial automation and high-performance electric vehicles.
  • Power factor correction circuits to improve energy efficiency in power distribution.

Quality and Reliability

ON Semiconductor is committed to the highest standards of product quality and reliability. The AFGHL50T65SQD is built with robust manufacturing processes and is subjected to rigorous testing to ensure it meets the stringent requirements of industrial and automotive-grade applications. With this IGBT, designers can expect a durable and dependable component that will contribute to the longevity and performance of their power systems.

For detailed specifications, application notes, and additional resources, please refer to the official ON Semiconductor documentation for the AFGHL50T65SQD.

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33+ $3.0336 $100.1088
52+ $2.9388 $152.8176
71+ $2.8440 $201.9240
91+ $2.7492 $250.1772
122+ $2.4648 $300.7056
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Availability: 3,420 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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