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BC238BRL1

Part No BC238BRL1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description SMALL SIGNAL BIPOLAR TRANSISTOR / Bipolar (BJT) Transistor
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 2,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 969729-BC238BRL1
Ultra Librarian 3D Model Ultra Librarian BC238BRL1 CAD Model

Description

ON Semiconductor BC238BRL1 NPN Bipolar Transistor

The ON Semiconductor BC238BRL1 is a high-quality NPN bipolar transistor designed for use in a wide range of electronic applications. This versatile component is particularly well-suited for general-purpose switching and amplification tasks, making it a valuable addition to both hobbyist and professional electronic projects.

With its compact TO-92 package, the BC238BRL1 is designed for through-hole mounting, ensuring easy integration into a variety of circuit boards. This package is not only user-friendly but also provides a reliable mechanical and electrical connection to the circuit.

Key Features:

  • Transistor Type: NPN - This allows for efficient current control in a circuit, with electrons as the majority charge carriers.
  • Collector-Emitter Voltage (Vceo): 25V - The maximum voltage between the collector and emitter at which the transistor can operate safely.
  • Collector-Base Voltage (Vcbo): 30V - The maximum voltage that can be applied between the collector and base without causing damage.
  • Emitter-Base Voltage (Vebo): 5V - The maximum voltage that can be applied between the emitter and base.
  • Collector Current - Continuous (Ic): 100mA - The maximum continuous current that can flow through the collector.
  • Power Dissipation (Pd): 625mW - The amount of power that the transistor can dissipate without exceeding its maximum operating temperature.
  • DC Current Gain (hFE): 100 to 300 - A measure of the transistor's amplification capability, indicating the ratio of the collector current to the base current.
  • Operating and Storage Junction Temperature Range: -55°C to +150°C - Ensuring reliability across a wide range of environmental conditions.

The BC238BRL1 is also characterized by its low noise figure, making it an excellent choice for audio applications and other sensitive electronic circuits where signal integrity is paramount. Additionally, its high gain bandwidth product ensures that it can be used effectively at higher frequencies.

Whether you're designing a new circuit or replacing a component in an existing one, the ON Semiconductor BC238BRL1 NPN bipolar transistor is a solid choice that combines performance, reliability, and cost-effectiveness.

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