The BC807BLT1 from ON Semiconductor is a PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This versatile component is a crucial part of electronic circuits and is widely used in commercial and industrial electronic devices.

Key Features

• Transistor Type: PNP - This indicates that the BC807BLT1 is a PNP transistor, which means it is turned on when a small current flows through the base in the opposite direction of the emitter to collector current.
• Package / Case: SOT-23-3 - The SOT-23-3 is a small and efficient surface-mount package, which allows for high-density mounting and is well-suited for automated assembly processes.
• Collector-Emitter Voltage (Vceo): 45V - This is the maximum voltage that can be applied from the collector to the emitter when the base is open.
• Collector Current (Ic): 500mA - The maximum continuous current that can flow from the collector to the emitter.
• Power Dissipation (Pd): 250mW - The amount of power that the BC807BLT1 can dissipate without exceeding its maximum operating temperature.
• DC Current Gain (hFE): 100 to 600 - This range indicates the transistor's ability to amplify the current. The hFE value is a ratio of the collector current to the base current.
• Operating Temperature Range: -55°C to +150°C - The BC807BLT1 can operate efficiently within this wide temperature range, making it suitable for various environmental conditions.
• RoHS Compliant: Yes - The product complies with the Restriction of Hazardous Substances Directive, which limits the use of certain hazardous materials in electronic equipment.

Applications

The BC807BLT1 PNP transistor can be used in a wide range of applications, including:

• Switching and Amplification
• Signal Processing
• Power Management
• Load Drivers
• Audio Amplifiers
• Low-side Switching

ON Semiconductor's BC807BLT1 is a reliable and efficient choice for designers and engineers looking for a PNP transistor that offers both versatility and performance in a compact package.