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STP27N3LH5

Part No STP27N3LH5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 27A TO220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 4.6nC @ 5V
Max Input Capacitance 475pF @ 25V
Maximum Gate-Source Voltage ±22V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 13.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 053926-STP27N3LH5
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian STP27N3LH5 CAD Model

Description

STP27N3LH5 - N-Channel MOSFET by STMicroelectronics

The STP27N3LH5 is a robust N-channel power MOSFET designed and manufactured by the renowned semiconductor company, STMicroelectronics. This device is part of STMicroelectronics' MDmesh™ V series, which is known for its high efficiency and performance in a wide range of applications. The STP27N3LH5 is specifically engineered to address the demanding requirements of high-power switching applications.

With a maximum drain-source voltage (V<sub>DS) of 30V, and a continuous drain current (I<sub>D) of 27A at 25°C, this MOSFET is capable of handling significant power. It features an extremely low on-resistance (R<sub>DS(on)) of only 0.073Ω, which contributes to its high efficiency by minimizing conduction losses.

The STP27N3LH5 comes in a TO-220 package, which is widely used in the industry due to its ability to effectively dissipate heat. This makes the MOSFET suitable for high-power applications where thermal management is crucial. Additionally, the device boasts a 100% avalanche tested design, ensuring reliability and robustness in harsh conditions where unexpected voltage spikes may occur.

One of the key features of the STP27N3LH5 is its MDmesh™ V technology, which utilizes a vertical structure to achieve a very low gate charge (Q<sub>G) and reduced capacitance. This results in faster switching speeds and further reduces power losses, making it ideal for high-frequency power conversion systems such as DC/DC converters, motor drives, and power management circuits.

Moreover, the MOSFET is designed with Zener-protected gate, providing intrinsic protection against electrostatic discharge (ESD) events. This feature is critical in safeguarding the device during handling and operation, enhancing its durability and longevity.

In summary, the STP27N3LH5 is a high-performance N-channel MOSFET that offers excellent efficiency, thermal performance, and reliability for a variety of power applications. Its advanced technology and robust design make it a preferred choice for engineers and designers looking to optimize their power management solutions.

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