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BC848CDW1T1G

Part No BC848CDW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 30V 0.1A SOT363 / Trans GP BJT NPN 30V 0.1A 380mW 6-Pin SC-88 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 420 @ 2mA, 5V
Maximum Power Dissipation 380mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 011135-BC848CDW1T1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name BC848CDW1
Introduction Date May 25, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian BC848CDW1T1G CAD Model

Description

ON Semiconductor BC848CDW1T1G - NPN Bipolar Transistor

The BC848CDW1T1G from ON Semiconductor is a versatile NPN bipolar transistor that offers a seamless blend of high performance and reliability for a wide range of electronic applications. This small-signal transistor is a fundamental component commonly used in amplification and switching applications due to its high-speed switching capabilities and efficient current control.

Key Features:

  • Transistor Type: NPN - The NPN configuration allows for efficient current amplification when a small base current controls a larger collector-emitter current.
  • Package: SOT-323 - The compact SOT-323 package is ideal for space-constrained applications, providing a small footprint while maintaining robustness and performance.
  • Collector-Emitter Voltage (Vceo): 30V - This transistor can handle moderate voltages, making it suitable for various circuits.
  • Collector Current (Ic): 100mA - The BC848CDW1T1G can control a collector current of up to 100mA, which is sufficient for many low to medium power applications.
  • DC Current Gain (hFE): 420 at 2mA - A high current gain indicates the transistor's efficiency in amplifying the base current.
  • Power Dissipation: 200mW - This value represents the amount of power the transistor can dissipate without damage, ensuring stable operation under various conditions.
  • Operating Temperature: -55°C to +150°C - The device can reliably operate over a wide temperature range, accommodating diverse environmental conditions.

Applications:

The BC848CDW1T1G is commonly used in:

  • General-purpose amplification circuits
  • Switching applications
  • Signal processing
  • Power management solutions
  • Consumer electronics
  • Telecommunication systems

With its impressive specifications and ON Semiconductor's commitment to quality, the BC848CDW1T1G is a reliable choice for designers and engineers seeking a component that provides consistent performance and durability. Whether incorporated into complex industrial systems or basic consumer electronics, this NPN bipolar transistor is engineered to meet the demands of an array of electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,935+ $0.0259 $50.1165
4,120+ $0.0243 $100.1160
6,415+ $0.0234 $150.1110
9,175+ $0.0218 $200.0150
11,965+ $0.0209 $250.0685
14,930+ $0.0201 $300.0930
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 57,938 pieces
MOQ: 1935 pcs
Order Increment : 1 pcs
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