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BD676

Part No BD676
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP DARL 45V 4A TO-126
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Bulk
Status Active
Transistor Polarity PNP - Darlington
Maximum Current Collector 4A
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 2.8V @ 40mA, 2A
Collector Cut-off Current(Max) 500μA
Typical Gain (hFE) (Min) 750 @ 2A, 3V
Maximum Power Dissipation 14W
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-126
Win Source Part Number 234443-BD676
Popularity Medium
Supply and Demand Status Balance
Quantity per package 500
Ultra Librarian 3D Model Ultra Librarian BD676 CAD Model

Description

ON Semiconductor BD676 Darlington Transistor

The ON Semiconductor BD676 is a medium-power Darlington transistor that offers a combination of high current and voltage capabilities, making it suitable for a variety of applications. This PNP bipolar transistor is designed for use in driver stages of audio amplifiers, output stages of power amplifiers, and in other general-purpose switching applications where high gain and current are required.

The BD676 features a monolithic construction with built-in base-emitter shunt resistors. This design ensures excellent hFE linearity and high DC current gain, which is typically around 1000 at a collector current of 1.5A. The device can handle collector currents up to 4A, making it capable of driving larger loads. With a collector-emitter voltage of 45V and a power dissipation of 40W, the BD676 can be used in circuits that experience moderate voltage and power levels.

ON Semiconductor has designed the BD676 with reliability in mind. It comes packaged in a TO-225 case, which provides good thermal performance and is suitable for through-hole mounting. This makes it easy to integrate into existing designs. The device also features a maximum operating junction temperature of 150°C, allowing it to perform reliably even in high-temperature environments.

For circuit designers, the BD676 offers the advantage of simplified circuitry due to its Darlington configuration. This configuration provides high input impedance, which minimizes the loading effect on the preceding stages of a circuit. Additionally, the high current gain allows for direct driving from logic circuits, microcontrollers, or other low-power signal sources without the need for additional amplification.

Overall, the ON Semiconductor BD676 is a versatile and robust component for applications requiring high current gain and power handling. Its ease of use, combined with ON Semiconductor's reputation for quality and reliability, makes it a solid choice for both new designs and as a replacement part in existing equipment.

For detailed specifications and application notes, designers and engineers are encouraged to consult the BD676 datasheet available on ON Semiconductor's official website or through authorized distributors.

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1455 $50.1975
840+ $0.1194 $100.2960
1,300+ $0.1157 $150.4100
1,790+ $0.1120 $200.4800
2,315+ $0.1082 $250.4830
3,095+ $0.0970 $300.2150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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