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BUV21G

Part No BUV21G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 200V 40A TO-3 / Trans GP BJT NPN 200V 40A 250000mW 3-Pin(2+Tab) TO-204 Tray
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Series SWITCHMODE
Packaging Tray
Transistor Type NPN
Current - Collector (Ic) (Maximum) 40A
Voltage - Collector Emitter Breakdown (Maximum) 200V
Vce Saturation (Maximum) @ Ib, Ic 1.5V @ 3A, 25A
Current - Collector Cutoff (Maximum) 3mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 20 @ 12A, 2V
Power - Max 250W
Frequency - Transition 8MHz
Operating Temperature Range -65°C ~ 200°C (TJ)
Mounting Style Through Hole
Package TO-204AE
Manufacturer Package TO-3
Win Source Part Number 770692-BUV21G
Popularity Medium
Supply and Demand Status Limited
Family Name BUV21
Introduction Date August 31, 1995
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian BUV21G CAD Model

Description

Introducing the BUV21G Power Transistor by ON Semiconductor

The BUV21G is a high-performance NPN bipolar power transistor designed by ON Semiconductor, a leader in energy-efficient innovations. This robust transistor is specifically tailored for high-power switching applications and linear amplification processes. The BUV21G is built to handle significant voltage and current, making it an ideal choice for a variety of demanding environments.

Constructed with state-of-the-art silicon technology, the BUV21G boasts outstanding power dissipation capabilities, which are critical for maintaining stability and efficiency in high-power circuits. With a collector-emitter voltage (VCEO) of 400V and a collector current (IC) of up to 15A, this power transistor is capable of managing challenging electrical loads while offering excellent performance characteristics.

The BUV21G features a low collector-emitter saturation voltage (VCE(sat)), which minimizes power loss during operation, thereby contributing to the overall energy efficiency of the system it is used in. This characteristic is particularly beneficial in applications where power efficiency is paramount, such as in switch-mode power supplies, motor controllers, and other power conversion devices.

ON Semiconductor has designed the BUV21G with reliability in mind. The device includes a built-in anti-saturation circuit, which helps to protect the transistor from damage caused by excessive current conditions, thus extending its operational lifespan. Additionally, the BUV21G is equipped with a fast-switching speed that enhances performance in high-frequency applications.

The packaging of the BUV21G is thoughtfully designed to ensure easy integration into various circuit designs. Its TO-220 package is widely recognized and favored for its thermal efficiency, allowing for effective heat dissipation during operation. This feature is critical in maintaining the performance and reliability of the transistor over time.

In summary, the BUV21G from ON Semiconductor represents a reliable and efficient solution for designers and engineers looking to incorporate a high-voltage, high-current transistor into their power applications. Its combination of power handling, efficiency, speed, and thermal management makes it a versatile component suitable for a broad range of industrial, commercial, and consumer products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $28.3439 $56.6878
5+ $23.2565 $116.2825
7+ $22.5298 $157.7086
10+ $21.8030 $218.0300
12+ $21.0762 $252.9144
16+ $18.8959 $302.3344
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 70 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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