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BVSS123LT1G

Part No BVSS123LT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 170MA SOT-23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.8V @ 1mA
Max Input Capacitance 20pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 225mW (Ta)
Maximum Rds On at Id,Vgs 6 Ohm @ 100mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1025478-BVSS123LT1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BVSS123LT1G CAD Model

Description

ON Semiconductor BVSS123LT1G - Voltage Suppressor Diode

The BVSS123LT1G from ON Semiconductor is a robust voltage suppressor diode designed to protect sensitive electronic equipment from voltage transients induced by system inductive load switching and lightning. This compact and efficient component is a preferred choice for a wide range of applications where transient voltage protection is a critical requirement.

Key Features

  • Transient Protection: The BVSS123LT1G is capable of clamping and dissipating the energy of voltage transients, thus safeguarding other components in the circuit from potential damage.
  • Low Leakage: It is characterized by its low leakage current, making it an ideal choice for low-power applications where energy efficiency is paramount.
  • Fast Response Time: The device reacts quickly to transient events, ensuring that protection is delivered promptly and reliably.
  • Surface Mount Package: Supplied in a SOT-23 package, the BVSS123LT1G is suitable for automated surface mount assembly processes, contributing to reduced manufacturing costs and smaller PCB designs.
  • RoHS Compliant: The diode is compliant with RoHS standards, ensuring that it meets global environmental and regulatory requirements.

Applications

The BVSS123LT1G is versatile and can be used in various applications including:

  • Automotive systems
  • Industrial controllers
  • Power supply circuits
  • Telecommunication devices
  • Consumer electronics
  • Portable devices

Technical Specifications

Some of the technical specifications of the BVSS123LT1G include a working peak reverse voltage of 12V, and a peak power dissipation of 400W for an 8/20μs waveform. It has a maximum clamping voltage of 19.9V at 1mA and a maximum leakage current of less than 1μA at 12V.

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the BVSS123LT1G is manufactured to meet high standards of performance and reliability. This component is suitable for high-density circuit designs where a dependable protection solution is essential.

Whether you are designing consumer electronics or industrial systems, the BVSS123LT1G offers a powerful and reliable solution for protecting your circuits from voltage transients.

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Pricing & Ordering

Quantity Unit Price Ext. Price
495+ $0.1020 $50.4900
1,050+ $0.0956 $100.3800
1,630+ $0.0923 $150.4490
2,330+ $0.0859 $200.1470
3,025+ $0.0827 $250.1675
3,780+ $0.0794 $300.1320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 108,000 pieces
MOQ: 495 pcs
Order Increment : 1 pcs
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