The CAT28LV256NI-25 is a high-performance 256-Kilobit parallel EEPROM from ON Semiconductor, designed with state-of-the-art non-volatile memory technology. This robust storage device offers a convenient and reliable way to store configuration, calibration, and user data that must be preserved through power cycles and for the life of the system.

Key Features

• Memory Size: 256K (32K x 8) offering ample space for a wide range of applications.
• Speed: The device has an access time of 250 nanoseconds, making it suitable for high-performance systems that require fast data retrieval.
• Operating Voltage: It operates within a voltage range of 4.5V to 5.5V, compatible with standard 5V systems.
• Endurance: It boasts an impressive endurance of 100,000 program/erase cycles, ensuring a long operational lifespan.
• Data Retention: Data retention is guaranteed for a minimum of 10 years, providing long-term data stability.
• Temperature Range: The device is designed to operate within the industrial temperature range of -40°C to +85°C, making it suitable for harsh environments.

Applications

The CAT28LV256NI-25 is ideal for a variety of applications that require reliable and durable non-volatile memory storage. It is commonly used in:

• Telecommunication systems
• Industrial control systems
• Medical equipment
• Automotive electronics
• Consumer electronics

Product Advantages

ON Semiconductor's CAT28LV256NI-25 EEPROM provides designers with several advantages:

• Its fast access time enables quick data retrieval, essential for real-time applications.
• The device's low power consumption makes it an excellent choice for battery-operated and power-sensitive applications.
• Its simple parallel interface ensures ease of integration into existing systems without the need for complex programming or additional components.
• Robustness in harsh environments allows for versatile deployment across various industrial applications.

In summary, the CAT28LV256NI-25 from ON Semiconductor is a reliable and versatile EEPROM solution that meets the needs of a wide range of applications requiring durable and fast non-volatile memory storage.