ON Semiconductor FCP067N65S3 - Power MOSFET

The FCP067N65S3 from ON Semiconductor is a state-of-the-art power MOSFET designed to deliver high efficiency and performance for a wide range of applications. This device is a part of the high-performance SuperFET III series, which is known for its superior switching performance and robustness in high-voltage applications.

Key Features:

• High Voltage Capability: The FCP067N65S3 boasts a 650V drain-to-source voltage (V<sub>DS), making it ideal for high voltage applications that require reliable operation and long-term durability.
• Low On-Resistance: With an R<sub>DS(on) of just 67 mΩ, this MOSFET ensures minimal conduction losses, leading to higher efficiency in power conversion systems.
• Fast Switching Speed: The device is designed for fast switching, reducing switching losses and improving performance in high-frequency applications.
• High Current Capability: It supports a continuous drain current (I<sub>D) of 47A, allowing it to handle significant power levels.
• Improved Thermal Performance: The FCP067N65S3 comes in an industry-standard TO-220 package, which offers excellent thermal performance and simplifies heat management within electronic systems.

Applications:

The versatility of the FCP067N65S3 makes it suitable for a broad range of applications, including:

• Switch Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• Uninterruptible Power Supplies (UPS)
• LED Lighting
• DC-AC Inverters for Solar Power Systems
• High-Efficiency DC-DC Converters

Quality and Reliability:

ON Semiconductor is committed to providing high-quality and reliable components. The FCP067N65S3 is no exception, with rigorous testing and quality control measures in place to ensure it meets the stringent requirements of the industry. This MOSFET is RoHS compliant, ensuring environmental standards are met for hazardous substances.

Conclusion:

With its advanced technology, the FCP067N65S3 from ON Semiconductor is an excellent choice for designers looking to enhance efficiency, reliability, and performance in their power management systems. The combination of high voltage capability, low on-resistance, fast switching, and high current handling makes this power MOSFET a powerful component for modern electronic designs.