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FDMC510P-F106

Part No FDMC510P-F106
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 12A/18A 8WDFN  /  P-Channel 20 V 12A (Ta), 18A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-WDFN (3.3x3.3)
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Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series PowerTrench®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 8mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 116 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 7860 pF @ 10 V
Power Dissipation (Max) 2.3W (Ta), 41W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN
Base Product Number FDMC510
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
Win Source Part Number 1164471-FDMC510P-F106
Ultra Librarian 3D Model Ultra Librarian FDMC510P-F106 CAD Model

Description

ON Semiconductor FDMC510P-F106 MOSFET Overview

The FDMC510P-F106 from ON Semiconductor is a high-performance, P-Channel PowerTrench® MOSFET designed for a wide range of applications. This component is ideal for power management tasks where high efficiency and reliability are paramount. The FDMC510P-F106 is a testament to ON Semiconductor's commitment to providing innovative solutions that meet the evolving demands of the electronics industry.

Key Features

  • Low R<sub>DS(on): The device offers a low on-resistance, which means it has a lower voltage drop across the device when conducting. This feature contributes to higher efficiency and reduced power losses in circuits.
  • High Current Capability: With the ability to handle a substantial continuous drain current, this MOSFET can be used in applications that require high-power density and robust performance.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process enables the FDMC510P-F106 to achieve optimal power and switching performance, making it suitable for high-frequency power switching applications.
  • RoHS Compliant: The device is compliant with RoHS standards, ensuring that it meets environmental regulations by avoiding the use of hazardous substances.

Applications

The FDMC510P-F106 MOSFET is versatile and can be used in various applications, including:

  • Power supply circuits
  • DC-DC converters
  • Load switches
  • Battery management systems
  • Motor control circuits

Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) -30 V Gate-Source Voltage (V<sub>GS) ±20 V Continuous Drain Current (I<sub>D) -20 A Power Dissipation (P<sub>D) 2.5 W R<sub>DS(on) 8.4 mΩ at V<sub>GS = -10 V, I<sub>D = -20 A

The FDMC510P-F106 is a superior choice for designers looking for a P-Channel MOSFET that combines efficiency, power handling, and environmental compliance. Its advanced features and robust performance make it an excellent choice for cutting-edge electronic designs.

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