The ON Semiconductor FDMS2D5N08C is a high-performance N-Channel PowerTrench® MOSFET designed for a wide range of applications that demand high efficiency and reliability. This MOSFET utilizes advanced PowerTrench technology to deliver superior switching performance with low gate charge and low on-resistance.

Key Features

• Low On-Resistance: The FDMS2D5N08C features an exceptionally low on-resistance (R<sub>DS(on)) of 8.4 mΩ at V<sub>GS = 10 V, which enhances overall efficiency by minimizing conduction losses.
• High Continuous Drain Current: With a continuous drain current (I<sub>D) of 14 A, this MOSFET can handle significant power, making it suitable for high-power applications.
• PowerTrench® Technology: The utilization of PowerTrench technology ensures optimal power density and reduced switching losses, leading to improved power efficiency and thermal performance.
• Low Gate Charge: The device has a low total gate charge (Q<sub>g) which results in faster switching speeds and reduced switching losses, beneficial for high-frequency applications.
• High Performance Packaging: Encased in a compact 8-Pin Power 56 package, the FDMS2D5N08C offers excellent thermal resistance and a small footprint, ideal for space-constrained applications.

Applications

The FDMS2D5N08C is versatile and can be used in various applications, including:

• DC/DC converters
• Power supply units
• Motor drives
• Battery management systems
• Computing and server power systems

Technical Specifications

With its robust construction and cutting-edge technology, the ON Semiconductor FDMS2D5N08C N-Channel PowerTrench® MOSFET is an excellent choice for designers looking to enhance power efficiency and performance in their electronic designs.