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IXTC75N10

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Part No	IXTC75N10
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 100V 72A ISOPLUS220 / N-Channel 100 V 72A (Tc) 230W (Tc) Through Hole ISOPLUS220™
Datasheet	IXTC75N10 Datasheet
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	IXYS
Series	MegaMOS™
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	20mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	260 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4500 pF @ 25 V
Power Dissipation (Max)	230W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ISOPLUS220™
Package / Case	ISOPLUS220™
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50
Win Source Part Number	1179102-IXTC75N10
Ultra Librarian 3D Model	Ultra Librarian IXTC75N10 CAD Model

Alternative Products

Description

The IXTC75N10 is an N-channel MegaMOS™ MOSFET with a drain to source voltage of 100V and a continuous drain current of 72A @ 25°C.

Vds Drain-Source Voltage: 100V
Id Continuous Drain Current @ 25°C: 72A
Rds On @ Id, Vgs: 20mOhm @ 37.5A, 10V
Qg Gate Charge @ Vgs: 260 nC @ 10V
Input Capacitance @ Vds: 4500pF @ 25V
Vgs Gate-Source Voltage: ±20V
Operating Temperature: -55°C ~ 150°C
Package: ISOPLUS220™

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