The FDMS86255ET150 is a state-of-the-art N-channel PowerTrench® MOSFET from ON Semiconductor, designed to deliver high-efficiency power management and conversion for a wide range of applications. This device is a testament to ON Semiconductor's commitment to providing energy-efficient solutions that meet the rigorous demands of modern electronic systems.
Key Features
- Low RDS(on): The device boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications.
- High Continuous Drain Current (ID): With a robust continuous drain current rating, this MOSFET can handle high-power applications with ease.
- PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process minimizes on-state resistance while maintaining superior switching performance, making this device ideal for high switching frequency applications.
- Optimized Gate Charge: The FDMS86255ET150 has been optimized for a low total gate charge (Qg), which reduces the power required to drive the MOSFET, thereby improving overall system efficiency.
Applications
The FDMS86255ET150 is versatile and can be used in a variety of applications, including:
- DC-DC converters
- Power supplies for servers, telecom, and industrial uses
- Motor drives
- Synchronous rectification
- Battery management systems
- Load switches
Product Specifications
| Parameter |
Value |
| VDS (Drain-Source Voltage) |
150V |
| RDS(on) |
8.4 mΩ (max) |
| ID (Continuous Drain Current) |
13 A |
| Qg (Total Gate Charge) |
17 nC (typ) |
Reliability and Quality
ON Semiconductor ensures that the FDMS86255ET150 meets the highest quality and reliability standards. This MOSFET is RoHS compliant and is designed to withstand rigorous environmental and stress conditions, ensuring long-term reliability in your applications.
Conclusion
With its advanced features and high-performance capabilities, the FDMS86255ET150 from ON Semiconductor is an excellent choice for designers looking to optimize their power management systems for efficiency and reliability. Its low on-resistance, high current capacity, and efficiency-focused design make it a key component in a range of electronic devices.