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FDMS86255ET150

Part No FDMS86255ET150
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 10A/63A POWER56 / N-Channel 150 V 10A (Ta), 63A (Tc) 3.3W (Ta), 136W (Tc) Surface Mount 8-PQFN (5x6)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series PowerTrench®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 12.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4480 pF @ 75 V
Power Dissipation (Max) 3.3W (Ta), 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-PowerTDFN
Base Product Number FDMS86255
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names ONSONSFDMS86255ET150,FDMS86255ET150CT,2156-FDMS86255ET150-OS,FDMS86255ET150TR,FDMS86255ET150DKR
Standard Package 3,000
Win Source Part Number 979677-FDMS86255ET150
Ultra Librarian 3D Model Ultra Librarian FDMS86255ET150 CAD Model

Description

The FDMS86255ET150 is a state-of-the-art N-channel PowerTrench® MOSFET from ON Semiconductor, designed to deliver high-efficiency power management and conversion for a wide range of applications. This device is a testament to ON Semiconductor's commitment to providing energy-efficient solutions that meet the rigorous demands of modern electronic systems.

Key Features

  • Low RDS(on): The device boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Continuous Drain Current (ID): With a robust continuous drain current rating, this MOSFET can handle high-power applications with ease.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process minimizes on-state resistance while maintaining superior switching performance, making this device ideal for high switching frequency applications.
  • Optimized Gate Charge: The FDMS86255ET150 has been optimized for a low total gate charge (Qg), which reduces the power required to drive the MOSFET, thereby improving overall system efficiency.

Applications

The FDMS86255ET150 is versatile and can be used in a variety of applications, including:

  • DC-DC converters
  • Power supplies for servers, telecom, and industrial uses
  • Motor drives
  • Synchronous rectification
  • Battery management systems
  • Load switches

Product Specifications

Parameter Value
VDS (Drain-Source Voltage) 150V
RDS(on) 8.4 mΩ (max)
ID (Continuous Drain Current) 13 A
Qg (Total Gate Charge) 17 nC (typ)

Reliability and Quality

ON Semiconductor ensures that the FDMS86255ET150 meets the highest quality and reliability standards. This MOSFET is RoHS compliant and is designed to withstand rigorous environmental and stress conditions, ensuring long-term reliability in your applications.

Conclusion

With its advanced features and high-performance capabilities, the FDMS86255ET150 from ON Semiconductor is an excellent choice for designers looking to optimize their power management systems for efficiency and reliability. Its low on-resistance, high current capacity, and efficiency-focused design make it a key component in a range of electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.6464 $53.5248
16+ $6.2740 $100.3840
25+ $6.0779 $151.9475
35+ $5.8818 $205.8630
44+ $5.6858 $250.1752
59+ $5.0976 $300.7584
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,093 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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