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FDP039N08B_F102

Part No FDP039N08B_F102
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 12
Reference case TO-220
Manufacturer ON Semiconductor
Manufacturer Homepage www.onsemi.com
Win Source Part Number 718371-FDP039N08B_F102
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDP039N08B_F102 CAD Model

Description

ON Semiconductor FDP039N08B_F102 N-Channel MOSFET

The FDP039N08B_F102 from ON Semiconductor is a high-performance N-Channel MOSFET designed to deliver efficient power management and conversion in a wide range of applications. This device is part of ON Semiconductor's advanced power MOSFET technology, which is renowned for low on-resistance, high switching performance, and reliability.

Key Features and Benefits

  • High Current Capability: The FDP039N08B_F102 is capable of handling continuous drain currents up to 80A, making it suitable for high-power applications.
  • Low On-Resistance: With an R<sub>DS(on) of just 3.9 mΩ at V<sub>GS = 10 V, this MOSFET ensures minimal power loss and improved efficiency.
  • High Switching Performance: Fast switching speeds reduce transition losses and enhance overall performance in switching applications.
  • Robust Thermal Characteristics: The device features a maximum junction temperature of 175°C, providing a wide operating temperature range and enhancing system reliability.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench process is engineered to optimize the device's forward and reverse recovery performance, which is critical for high-efficiency power supplies.

Applications

The FDP039N08B_F102 is ideal for a variety of high-performance applications, including:

  • DC/DC Converters
  • Motor Drives
  • Power Supply Systems
  • Automotive Applications
  • Uninterruptible Power Supplies (UPS)
  • Solar Power Inverters
  • High-Power Computing and Servers

Product Specifications

The FDP039N08B_F102 features a drain-to-source voltage (V<sub>DSS) of 80V, which provides a good balance between high-voltage capability and low conduction losses. Its gate charge (Q<sub>G) is optimized for a wide range of load conditions, ensuring that the device operates efficiently under various scenarios. The TO-220 package offers a practical solution for applications requiring high-power density and ease of mounting.

ON Semiconductor's commitment to quality and performance is evident in the FDP039N08B_F102 N-Channel MOSFET. With its robust design and leading-edge technology, it is an excellent choice for designers looking to enhance power efficiency and reliability in their systems.

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