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FDS86267P

Part No FDS86267P
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 150V 2.2A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Series PowerTrench®
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 255mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1130 pF @ 75 V
Power Dissipation (Max) 1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number FDS86267
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 843307-FDS86267P
Ultra Librarian 3D Model Ultra Librarian FDS86267P CAD Model

Description

ON Semiconductor FDS86267P PowerTrench® MOSFET

The ON Semiconductor FDS86267P is a state-of-the-art PowerTrench® MOSFET designed to deliver high-performance switching characteristics and enhanced power efficiency. This advanced power MOSFET is a perfect solution for a wide range of applications, including power supply, DC-DC converters, motor drives, and other power management tasks where efficiency and reliability are critical.

The FDS86267P is a P-Channel MOSFET that operates at -30V and -62A, featuring a low threshold drive which makes it suitable for low voltage applications. With an RDS(on) as low as 8.5mΩ at VGS = -10V, this MOSFET ensures minimal conduction losses, thereby improving the overall efficiency of the system it is integrated into. The device is housed in a compact SO-8 package, which is optimized for space-constrained applications while providing excellent thermal performance.

In addition to its low on-resistance, the FDS86267P incorporates ON Semiconductor's proprietary PowerTrench technology that significantly reduces the parasitic inductance and capacitance. This results in reduced switching losses, faster switching speeds, and improved overall performance. The technology also enhances the MOSFET's ability to handle high transient loads without sacrificing reliability or longevity.

The FDS86267P is also characterized by its robustness, with features such as a maximum junction temperature of 150°C and an ESD protection that safeguards the device from unforeseen electrical discharges. These features make the FDS86267P a highly reliable component for demanding environments where operational stability is paramount.

For engineers and designers looking for a high-efficiency, reliable P-Channel MOSFET, the ON Semiconductor FDS86267P offers a compelling solution. Whether it's for power regulation in portable devices, load switching in industrial systems, or controlling motors in automotive applications, this MOSFET is designed to meet the stringent requirements of modern electronic circuits.

With the FDS86267P, ON Semiconductor continues its legacy of providing innovative, high-quality components for advanced electronic solutions, helping designers to create products that are both powerful and energy-efficient.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3284 $51.2248
53+ $1.9105 $101.2565
82+ $1.8508 $151.7656
112+ $1.7911 $200.6032
145+ $1.7314 $251.0530
194+ $1.5523 $301.1462
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 67,500 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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