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FDWS86369-F085

Part No FDWS86369-F085
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 65A POWER56  /  N-Channel 80 V 65A (Tc) 107W (Tj) Surface Mount Power56
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series Automotive, AEC-Q101, PowerTrench®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 65A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2470 pF @ 40 V
Power Dissipation (Max) 107W (Tj)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package Power56
Package / Case 8-PowerVDFN
Base Product Number FDWS86369
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names FDWS86369_F085DKR,FDWS86369-F085DKR,FDWS86369_F085TR,FDWS86369-F085TR,FDWS86369-F085CT,FDWS86369_F085TR-ND,FDWS86369_F085,FDWS86369_F085CT,FDWS86369_F085CT-ND,FDWS86369_F085DKR-ND
Standard Package 3,000
Win Source Part Number 1059017-FDWS86369-F085
Ultra Librarian 3D Model Ultra Librarian FDWS86369-F085 CAD Model

Description

Overview of ON Semiconductor FDWS86369-F085

The FDWS86369-F085 from ON Semiconductor is a state-of-the-art power MOSFET designed for high-efficiency power management applications. This advanced device is part of ON Semiconductor's portfolio of power solutions that aim to provide exceptional performance, reliability, and energy savings. Engineered to address the demanding requirements of modern electronic circuits, the FDWS86369-F085 is an ideal choice for a wide range of applications including DC-DC converters, motor drives, and power supply units.

Key Features

  • Low R<sub>DS(on): The device boasts an extremely low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • High Current Capability: With its ability to handle high currents, the FDWS86369-F085 is well-suited for applications requiring robust power handling capabilities.
  • Single P-Channel: As a single P-Channel MOSFET, it offers simplicity in design and ease of integration into various circuit configurations.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® technology is employed to optimize the device's performance for fast switching, reduced gate charge, and lower power losses.
  • Thermal Management: The MOSFET is encapsulated in a Power56 package, which provides excellent thermal characteristics and helps maintain operational stability even under high temperature conditions.

Applications

  • Switching Power Supplies
  • Power Management for Computing
  • Motor Control Systems
  • DC-DC Converters
  • Load Switching

Product Specifications

The FDWS86369-F085 operates with a drain-source voltage (V<sub>DS) of up to 30V, and its P-Channel MOSFET configuration allows for a continuous drain current (I<sub>D) of significant amperage, ensuring reliable performance in high-power applications. The device's compact form factor is designed to meet the requirements of space-constrained designs while still delivering the high-quality performance expected from ON Semiconductor products.

In summary, the FDWS86369-F085 from ON Semiconductor represents a blend of advanced technology, high performance, and reliability, making it an excellent choice for designers seeking to enhance the efficiency and robustness of their power management systems.

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