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FGH75T65SQDNL4

Part No FGH75T65SQDNL4
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description 650V/75 FAST IGBT FSIII T
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features IGBT Trench Field Stop Through Hole TO-247-4L
Manufacturer ON Semiconductor
Package Tube
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Through Hole
Package TO-247-4
Case / Package TO-247-4L
Family Name FGH75
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number FGH75T65SQDNL4OS, FGH75T65SQDNL4-ND
Quantity per package 450
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 871763-FGH75T65SQDNL4
Ultra Librarian 3D Model Ultra Librarian FGH75T65SQDNL4 CAD Model

Description

The FGH75T65SQDNL4 is a cutting-edge IGBT (Insulated Gate Bipolar Transistor) from ON Semiconductor, a leading manufacturer in the semiconductor industry. This high-performance transistor is designed to meet the demanding requirements of modern power electronics applications. It's well-suited for use in a wide range of applications, including inverters, converters, UPS systems, and motor drives.

Key Features

  • High Efficiency: The FGH75T65SQDNL4 boasts low on-state voltage drop and minimal switching losses, leading to high efficiency in power conversion processes.
  • Robust Design: Engineered for durability, this IGBT can withstand high stress and temperature conditions, ensuring reliable performance and a long operational life.
  • High Current Rating: With a continuous collector current rating of 75A, this device can handle high power applications with ease.
  • Fast Switching Speed: The device features fast switching characteristics, making it ideal for applications requiring high-speed operation.
  • Low EMI: It is designed to minimize electromagnetic interference, ensuring stable operation in sensitive electronic environments.

Electrical Characteristics

  • Collector-Emitter Voltage (Vce) - 650V
  • Collector Current (Ic) - 75A
  • Power Dissipation (Pd) - 340W
  • Gate-Emitter Threshold Voltage (Vge(th)) - 5.0V
  • Maximum Operating Temperature - +175°C

Applications

The FGH75T65SQDNL4 is versatile and can be used in various high-power applications. Its robustness and reliability make it particularly suitable for:

  • Renewable energy systems such as solar inverters and wind turbines
  • Industrial motor drives and controls
  • Power supply units and UPS systems
  • Electric vehicle (EV) charging stations
  • Power factor correction circuits

ON Semiconductor's FGH75T65SQDNL4 is a testament to the company's commitment to providing high-quality, reliable components for the power electronics market. Its excellent performance and versatility make it a top choice for engineers and designers looking to enhance the efficiency and reliability of their power systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.6266 $60.3862
17+ $7.0782 $120.3294
26+ $6.8570 $178.2820
35+ $6.6359 $232.2565
46+ $6.4146 $295.0716
61+ $5.7511 $350.8171
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,800 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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