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FQP13N06

Part No FQP13N06
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 60V N-Channel MOSFET | MOSFET N-CH 60V 13A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 13A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 135mOhm at 6.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 7.5nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 310pF at 25V
Power Dissipation (Maximum) 45W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1175419-FQP13N06
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQP13N06 CAD Model

Description

The FQP13N06 from ON Semiconductor is a robust N-channel QFET® MOSFET designed for high-performance power switching applications. This semiconductor device is a fundamental component in modern electronics, offering high efficiency and reliability. It is suitable for a wide range of applications including power supplies, motor controls, inverters, and switching regulators.

Key Features

  • High Drain-Source Voltage: With a V<sub>DS of 60V, the FQP13N06 can handle significant voltage levels, making it versatile for various circuit designs.
  • High Continuous Drain Current: A continuous drain current (I<sub>D) of 13A allows for handling high current loads, ensuring suitability for power-intensive applications.
  • Low On-Resistance: The low R<sub>DS(on) of 0.135Ω minimizes on-state losses, thus improving the overall efficiency of the system in which it is used.
  • Fast Switching Speed: Its fast switching capability enhances performance in circuits that require high-speed operation.
  • High Input Impedance: A high input impedance ensures minimal drive power is required, which can be beneficial in low-power designs.

Applications

  • Switch Mode Power Supplies (SMPS)
  • DC-to-AC Inverters
  • Motor Drives
  • Power Management Functions

Reliability and Packaging

The FQP13N06 is encapsulated in a robust TO-220 package, known for its high thermal performance and durability. The device is also characterized for operation from -55°C to +175°C, ensuring reliable performance across a wide range of environmental conditions. ON Semiconductor's commitment to quality ensures that each FQP13N06 MOSFET meets stringent standards, providing designers with a dependable component for their power management solutions.

Conclusion

In summary, the FQP13N06 N-Channel MOSFET from ON Semiconductor is an excellent choice for designers looking for a high-performance, efficient, and reliable solution for their power switching needs. Its combination of high voltage capability, low on-resistance, and fast switching speeds makes it a versatile component suitable for a variety of demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4250 $59.5000
335+ $0.3488 $116.8480
515+ $0.3373 $173.7095
710+ $0.3269 $232.0990
915+ $0.3165 $289.5975
1,225+ $0.2830 $346.6750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,988 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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