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FQP7N80

Part No FQP7N80
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 800V N-Channel MOSFET | MOSFET N-CH 800V 6.6A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 800V
Id - Continuous Drain Current 6.6A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.5Ohm at 3.3A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 52nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1850pF at 25V
Power Dissipation (Maximum) 167W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1175452-FQP7N80
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQP7N80 CAD Model

Description

ON Semiconductor FQP7N80 MOSFET Overview

The FQP7N80 is a robust N-channel QFET® MOSFET designed and manufactured by ON Semiconductor, a leading name in power and signal management. This field-effect transistor is engineered to deliver high performance for a wide range of applications, making it a versatile component for designers and engineers.

Key Features

  • Voltage and Current Ratings: The FQP7N80 boasts an impressive 800V drain-source voltage (V<sub>DS) rating and a continuous drain current (I<sub>D) of 7A, providing a solid performance for high-voltage applications.
  • Low Gate Charge (Q<sub>G): With a reduced gate charge, this MOSFET enables faster switching speeds, which is essential for efficiency in power conversion applications.
  • R<sub>DS(on) Performance: The device offers a low on-state resistance, minimizing conduction losses and improving overall efficiency.
  • High Ruggedness: The FQP7N80 is designed to withstand high energy pulses in the avalanche and commutation modes, ensuring reliability and a longer lifespan.

Applications

The FQP7N80 is ideal for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Inverter Systems
  • Power Factor Correction (PFC) circuits
  • Electronic Lamp Ballasts
  • Industrial and Consumer Applications

Package and Quality Assurance

The MOSFET comes in a TO-220 package, which is widely used and known for its ease of installation and excellent thermal performance. ON Semiconductor is committed to the highest quality standards, and the FQP7N80 is no exception. It is produced with rigorous quality control procedures and is designed to meet or exceed industry standards for performance and reliability.

Environmental and Regulatory Compliance

ON Semiconductor is dedicated to sustainable practices and environmental stewardship. The FQP7N80 is compliant with RoHS (Restriction of Hazardous Substances) directives, ensuring that it is free from specific hazardous materials commonly used in electronics and electrical equipment.

For detailed specifications and application notes, designers and engineers are encouraged to consult the FQP7N80 datasheet available on the ON Semiconductor website.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8073 $60.5475
175+ $0.6630 $116.0250
270+ $0.6422 $173.3940
375+ $0.6214 $233.0250
485+ $0.6006 $291.2910
645+ $0.5382 $347.1390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,520 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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